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박준형,명승엽,이가원,Park, Jun-Hyoung,Myong, Seung-Yeop,Lee, Ga-Won 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12
Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.
권성원(Kwon, Seong-Won),곽중환(Kwak, Joong-Hwan),명승엽(Myong, Seung-Yeop),임굉수(Lim, Koeng-Su) 한국신재생에너지학회 2006 한국신재생에너지학회 학술대회논문집 Vol.2006 No.06
The protocrystalline silicon (pc-Si:H) multilayer solar cell is very promising owing to its fast stabilization with low degradation against light irradiation. However, the pc-Si:H multi layers have not extensively been investigated in detail on its material characteristics yet. We present the material characteristics of pc-Si:H multilayer using a transmission electron microscopy(TEM), and Raman spectroscopy. In addition, we present the superior light-soaking behavior of the pc-Si:H mutt i layer solar cell. A TEM micrograph shows that a pc-Si:H multilayer has a repeatedly layered structure and crystalline-like objects in a-Si:H matrix. A Raman spectra introduces improved short-range-order and medium-range-order in pc-Si:H multilayer. As a result the excellent metastability of the pc-Si:H multilayer solar cell is primarily due to the repeatedly layered structure that improves a structural order in absorber layer.
임굉수(Lim, Koeng Su),곽중환(Kwak, Joong Hwan),권성원(Kwon, Seong Won),명승엽(Myong, Seung Yeop) 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06
We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy (p-a-Si_{1-x}C_x:H) structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double (p-a-Si_{1-x}C_x:H) layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of 9.0% without any back reflector.