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RF 마그네트론 스퍼터를 사용하여 증착한 IZTO 박막의 Zn/Sn 비율에 따른 효과
김기환,마리야느 푸트리,구창영,이정아,김정주,이희영,Kim, Ki Hwan,Putri, Maryane,Koo, Chang Young,Lee, Jung-A,Kim, Jeong-Joo,Lee, Hee Young 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.8
Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.