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산소 분압에 따른 산화주석 박막의 전계효과 이동도 변화 분석
마대영,Ma, Tae Young 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.6
Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.
변위센서응용을 위한 피라미드형 실리콘 턴널링소자의 제조
마대영(Tae Young Ma),박기철(Ki Cheol Park),김정규(Jeong Gyoo Kim) 한국센서학회 2000 센서학회지 Vol.9 No.3
The tunneling current is exponentially dependent on the separation gap between a pair of conductors. The detection of displacement can be, therefore, carried out by measurement of a variation in the tunneling current. In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and Si₃N₄ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of SiO₂ with KOH. The stiffness of the Si₃N₄ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scone of the normal experimental condition, was suggested.
초음파 (超音波) 분무 (噴霧) 열분해법으로 (熱分解法) r - plane 사파이어 위헤 증착된 (蒸着) ZnO 막의 특성
마대영,문현열,이수철 ( Tae Young Ma,Hyun Yul Moon,Soo Chul Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.2
Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of 350℃. The resistivity was increased to above 3 X 10^6 Ω·cm with copper doping and vapor oxidation.
초음파(超音波) 분무(噴霧) 열분해법(熱分解法)으로 r-plane 사파이어 위에 증착(蒸着)된 ZnO 막(膜)의 특성(特性)
마대영,문현열,이수철,Ma, Tae-Young,Moon, Hyun-Yul,Lee, Soo-Chul 한국센서학회 1997 센서학회지 Vol.6 No.2
zinc acetate를 포함하는 용액으로부터 r-plane 사파이어 기판 위에 ZnO 막(膜)을 증착하였다. 초음파(超音波) 발생기(發生器)로 용액을 진동시켜 증기입자를 만든 후 이것을 고온 반응로(反應盧) 내에서 열분해(熱分解) 시켜 막(膜)을 증착하였다. 제조된 막(膜)의 결정성, 표면형태 및 조성을 XRD, SEM 및 AES로 각각 분석하였다. 기판온도가 막(膜)의 특성에 미치는 영향에 대해 조사하였다. 기판온도 $300^{\circ}C$에서 (110) 방향으로 강하게 성장된 막(膜)을 얻을 수 있었다. 구리의 첨가(添加)와 습식산화(濕式酸化)에 의해 막(膜)의 저항율을 $3{\times}10^{6}{\Omega}{\cdot}cm$이상으로 높일 수 있었다. Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of $350^{\circ}C$. The resistivity was increased to above $3{\times}10^{6}{\Omega}{\cdot}cm$ with copper doping and vapor oxidation.
ZnO:Al 시드 막의 보론 농도가 ZnO 나노로드의 성장 및 특성에 미치는 영향
마대영(Tae-Young Ma),박기철(Ki-Cheol Park) 대한전기학회 2017 전기학회논문지 Vol.66 No.10
Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on SiO2/Si wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at 90 °C for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.
고습에서 열처리된 ITO 박막의 전기적 및 광학적 특성
마대영(Tae Young Ma),박기철(Ki Cheol Park) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.1
고주파 마그네트론 스퍼터링으로 증착된 ~185 nm 두께의 ITO막을 습도 100%에서 열처리하였다. 온도 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃ 및 450 ℃에서 각각 4시간 동안 열처리하였다. 고습 열처리에 따른 저항률, 전자농도 및 이동도 변화를 조사하였다. XRD결과로 스트레스 변화를 계산하였으며, FESEM 사진을 통해 ITO막의 표면형상을 관찰하였다. 광투과율을 측정한 후 에너지 밴드 갭을 구하였으며, Burnstein-Moss 효과와 비교 및 분석하였다. The ~185 nm thick ITO films deposited by high frequency magnetron sputtering were annealed at 100% humidity. Annealing was performed at 200°C, 250°C, 300°C, 350°C, 400°C and 450°C for 4 hours, respectively. Variations in resistivity, electron concentration, and mobility by high-humidity annealing were investigated. The stress change was estimated from the XRD results, and the surface morphology of films was observed through the FESEM micrographs. After measuring the light transmittance, the energy-band-gap was obtained and analyzed with the Burnstein-Moss effect.
粒界에서의 터널링으로 解析한 薄膜트랜지스터의 電流-電壓 特性
마대영,Ma, Tae-Young 대한전자공학회 1989 전자공학회논문지 Vol. No.
多結晶 薄膜트랜지스터의 電界效果 解析을 위한 物理的인 모델을 제시하였다. 본 논문의 모델에서는 粒子(grain) 하나를 單結晶 트랜지스터로 粒界(grain boundary)를 電位障壁을 갖는 絶緣體로 가정하였다. 따라서 多結晶 薄膜트랜지스터 粒子인 單結晶 트랜지스터들이 粒界를 경계로 직렬연결 되어 있는 것으로 간주하였으며, 粒子에 흐르는 電流는 gradual channel 근사식으로 또 粒界에 흐르는 電流는 터널링 이론으로 계산하였다. 出力特性과 비교하므로써 채널에서의 電位, 電界분포 등을 구하였으며 이결과들을 통해 본 모델을 검토하였다. 본 논문에서 제시한 다결정박막트랜지스터의 전도모델이 문턱전압이상의 素子동작해석에 타당함을 밝혔다. A physical model that characterizes the field effect of the polycrystalline thin film transistor(TFT) is developed. The model discribes grains as discrete single crystal transistors and grain boundaries as insulated layers having the potential barrier, Thus TFT is considered as serial connection of single crystal transistors and insulators. In the model, the currents in the grain and the grain boundary is calculated using gradual channel approximation and tunneling theory, respetively. By comparing computed I-V characteristics with measured I-V characteristics of CdSe TFT's, potential and electric field distributions in the channel are observed and the validity of the conduction model proposed in this paper is confirmed.