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G-PON용 높은 전광변환효율을 갖는 1.31 um 비냉각 DFB-LD
김정호,피중호,김덕현,박칠성,류한권,구본조,Kim, Jeong-Ho,Pi, Joong-Ho,Kim, Deok-Hyun,Park, Chil-Sung,Ryu, Han-Gwon,Koo, Bon-Jo 한국광학회 2007 한국광학회지 Vol.18 No.5
[ $-40^{\circ}C$ ]에서 $85^{\circ}C$의 온도에서 냉각장치 없이 동작하는 1.31 um 비냉각 DFB-LD가 유기 금속 화학 증착법에 의해 성장되었다. 높은 전광변환효율을 갖는 레이저의 제작은 스트레인이 인가된 다중양자우물 구조의 최적화를 통해 가능하며, 특히 스트레인의 양, 양자 우물의 두께, 전위장벽의 두께, 양자 우물의 수, 활성층의 폭에 주로 영향을 받는다. 본 연구에서 제작된 DFB-LD는 $25^{\circ}C$와 $85^{\circ}C$에서 전광변환효율은 0.38[mW/mA]와 0.26[mW/mA], 발진개시전류는 각각 7.1[mA]와 19.8[mA]의 값을 가졌다. A Strained Layer Multiquantum-Well (SL-MQW) distributed feedback laser at a wavelength of 1.31 um operating from $-40^{\circ}C$ to $85^{\circ}C$ without any cooling is grown by metal-organic chemical vapor deposition (MOCVD). Lasers with high slope efficiency are achieved through careful optimization of a SL-MQW active layer, especiallyoptimizing the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. In this paper, we obtain the slope efficiencies of 0.38[mW/mA] and 0.26 [mW/mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively. Threshold currents are 7.1[mA] and 19.8[mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively.
-40~85℃ 범위에서 단일모드 동작이 가능한 1.49㎛ 비냉각 DFB-LD의 제작
이우원(Woo-Won Lee),김정호(Jeong-Ho Kim),류한권(Han-Gwon Ryu),박칠성(Chil-Sung Park),피중호(Joong-Ho Pi),구본조(Bon-Jo Koo) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In order to obtain stable single mode operation around 1.49 ㎛ range over -40~85℃, strained layer MQW DFB-LD is fabricated by MOCVD method. Fabricated DFB-LDs have low threshold current of 6.2㎃ and 20.45㎃ at 25℃ and 85℃, respectively. Also, side-mode suppression ratio of them is over 35 ㏈m up to 85℃. Their slope efficiencies are 0.3㎽/㎃ and 0.21㎽/㎃ at 25℃ and 85℃, respectively.
MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어
정희석(Hee-Seok Jeong),고무순(Moo-Soon Ko),김대영(Dae-Young Kim),류한권(Han-Gwon Ryu),노재상(Jae-Sang Ro) 한국항해항만학회 2000 한국항해항만학회 학술대회논문집 Vol.3 No.1
This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the Rp (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.
초에너지 이온주입에 의한 초저접합 형성시 발생하는 Deactivation 현상에 관한 연구
盧在相,柳漢權 弘益大學校 科學基術硏究所 1999 科學技術硏究論文集 Vol.10 No.2
Semiconductor proces sing technologies have progressed toward ULSI(Ultra Large Scale Integration) regime to enhance packing density and operating speed and reduce power consumption. For these reasons, not only horizontal dimensions but also vertical dimensions will continue to be decreased to minimize short-channel effect such as punchthrough. Since an As ion has a rather high mass and low diffusivity during annealing, the formation of n??/p shallow junction is relatively easy. However, the formation of p??/n junction is difficult because a B ion is light and shows significant diffusion during annealing. Ultra shallow p??/n junction is formed by ULE(ultra low energy) implanter and RTA(Rapid Thermal Annealing). In this study deactivation phenomena was investigated according to various post-annealing condition after the formation of ultra shallow p??/n junction.