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$CCl_4$속에서 Thioamides 와 Dimethyl Sulfoxide (DMSO) 사이의 수소 결합에 대한 연구
도영락,김선진,윤창주,최영상,Young-Lac Do,Seon-Jin Kim,Chang-Ju Yun,Young-Sang Choi 대한화학회 1992 대한화학회지 Vol.36 No.2
사염화탄소 속에서 대단히 묽은 티오아미드 및 티오아미드-DMSO 용액의 $ν_{\alpha}$ + Amide II 조합띠에 대한 근적외선 스펙트럼을 $5^{\circ}C$ 와 $55^{\circ}C$ 사이에서 얻었다. 이 조합띠는 두 개의 Lorentzian-Gaussian product 함수로 분해되며, 각각은 단체 티오아미드 및 1 : 1 티오아미드-DMSO 복합체로 확인되었다. 티오아세트아미드(TA)와 DMSO 사이의 수소결합은 티오프로피온 아미드(TPA)와 DMSO 사이의 수소결합보다 약간 강하며 $CCl_4$ 속에서 TA-DMSO와 TPA-DMSO 1: 1 복합체에 대한 ${\Delta}H^{\circ}$는 각각 -15.3 kJ${\cdot}$$mol^{-1}$ 및 -14.2 kj${\cdot}$$mol^{-1}$이었다. Near-IR spectra for $ν_{\alpha}$+ Amide Ⅱ combination band of thioamides, and very dilute thioamide-DMSO solution in CCl4 were recorded in the temperature range of $5^{\circ}C$ to $55^{\circ}C$. This combination band was resolved by the computer program into two Lorentzian-Gaussian product function which have been identified with monomeric thioamide and thioamide-DMSO 1 : 1 complex. Equilibrium constants and thermodynamic parameters for the thioamide-DMSO hydrogen bonding were elucidated by the analysis of conce ntration and temperature dependent spectra. The hydrogen bonding strength between thioacetamide (TA) and DMSO in $CCl_4$ is stronger than that between thiopropionamide (TPA) and DMSO in CCl4. The ${\Delta}H^{\circ}$ for the TA-DMSO and TPA-DMSO 1 : 1 complex in CCl4 were -15.3 kJ${\cdot}$$mol^{-1}$ and -14.2 kj${\cdot}$$mol^{-1}$, respectively.
고기영,허영덕,도영락 대한화학회 2008 Bulletin of the Korean Chemical Society Vol.29 No.4
We report the cathodoluminescence and aging properties of a series of green phosphors of formula Sr1-xMxGa₂S₄:Eu (x = 0.0-1.0, M = Ba or Ca) that have potential applications in field emission displays (FEDs). The series of phosphors was synthesized via NaBr-aided solid-state reactions in a flowing H₂S stream. A low level (~20%) of Ba or Ca substitution for Sr in SrGa₂S₄:Eu maintains the orthorhombic phase of pure SrGa2S₄:Eu phosphors. Further, a low level (~20%) of Ba or Ca substitution for Sr in SrGa₂S₄:Eu provides various green colors and sufficient brightness for FED applications. Substitution of Ba or Ca for Sr in SrGa₂S₄:Eu also improved the stability of the phosphor when it was operated under electron-beam irradiation of 5 kV.
허영덕,성혜진,도영락,Heo, Yeong-Deok,Seong, Hye-Jin,Do, Yeong-Rak 대한화학회 2006 대한화학회지 Vol.50 No.6
series of Ca1-xSrxS:Ce phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Ce phosphors have a strong absorption in region from 430 nm to 470 nm. The emission peaks of CaS:Ce are located at 510 nm and 570 nm. The partial replacement of Ca by Sr in Ca1-xSrxS:Ce causes a blue shift of emission wavelengths. The Ca1-xSrxS:Ce can be used as bluish green and yellow emitting phosphors for white light emitting diodes (LEDs) pumped by the blue LED. We reported the optical properties of Ca1-xSrxS:Ce phosphors for application in phosphor converted white LEDs. Ca1-xSrxS:Ce 형광체를 고상법으로 합성하였다. Ca1-xSrxS:Ce 형광체는 430nm와 470nm 영역에서 강한 흡수가 있다. CaS:Ce은 510 nm와 570 nm에서 발광한다. Ca1-xSrxS:Ce에서 Ca이 Sr으로 치환되면 발광 파장은 단파장 이동을 한다. 청색 발광 다이오드를 사용하여 백색 발광 다이오드를 얻는데 Ca1-xSrxS:Ce 형광체는 푸른빛을 띤 녹색과 황색을 방출할 수 있는 형광체로 사용될 수 있다. 백색 발광 다이오드의 적용을 위한 Ca1-xSrxS:Ce 형광체의 광 특성을 확인하였다.
Preparation with Laser Ablation and Photoluminescence of Y3Al5O12:Ce Nanophosphors
조영식,허영덕,박찬량,도영락 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
We prepared Y3Al5O12:Ce (YAG:Ce) nanophosphors with a mean size of 15 nm by using laser ablation of micron-sized commercial YAG:Ce target phosphor in 1,4-butanediol. The photoluminescence properties of the YAG:Ce nanophosphors were compared with those of micron-sized YAG:Ce phosphor. The elimination of backscattering effect was confirmed by the optical properties of the YAG:Ce nanophosphors. The thermal stability of the YAG:Ce nanophosphors was also examined for the use of high power white LED. We convinced that the laser ablation method in 1,4-butanediol is an adequate method for the preparation of YAG:Ce nanophosphors for high power white LED with enhancement of the transmittance of the blue light from the InGaN chip.