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파손된 탱크의 기름 유출량 산정을 위한 2차원 입자법 시뮬레이션
남정우(J.-W. Nam),황성철(S.-C. Hwang),박종천(J.-C. Park),M.H. Kim 한국전산유체공학회 2011 한국전산유체공학회 학술대회논문집 Vol.2011 No.5
In the present study, the numerical prediction of the oil amount leaked from the hole of a damaged tank is investigated using the improved MPS (Moving Particle Semi-implicit) method, which was originally proposed by Koshizuka and Oka (1996) for incompressible flow. The governing equations, which consist of the continuity and Navier-Stokes equations, are solved by Lagrangian moving particles, and all terms expressed by differential operators should be replaced by the particle interaction models based on a Kernel function. The simulation results are validated though the comparison with the analytic solution based on Torricelli’s equilibrium relation. Furthermore, a series of numerical simulations under the various conditions are performed in order to estimate more accurately the initial amount of leaked oil.
남권선(K. S. NAM),최종필(J. P. CHOI),김병희(B. H. KIM),이낙규(N. K. LEE) 한국생산제조학회 2005 한국생산제조시스템학회 학술발표대회 논문집 Vol.2005 No.10
This paper presents the fabrication of inchworm motor for high precision actuator system of large displacement and high force. The inchworm motor consist of a extending actuator that provides displacement of tool guide, and two clamping actuators which provide the holding force. PZT element have low tensile strength and shear. So often fail under tensile and shear stress. To prevent failure, the pre-load housing was designed and fabricated to the optimal design condition according to the variation of the hinge stiffness by FEM(Finite Element Method) analysis. This is open-loop control and input voltage signals are three square wave of 50~60 percent duty cycles at each of the PZT elements. Also the dynamic characteristics of the system was verified by experiment results of the inchworm motor.
ICP Poly Etcher를 이용한 RF Power와 HBr Gas의 변화에 따른 Polysilicon의 건식식각
남상훈,현재성,부진효,Nam, S.H.,Hyun, J.S.,Boo, J.H. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.6
플래시 메모리 반도체의 고집적화와 고밀도화가 진행함에 따라 플래시 메모리의 트랜지스터 안 선폭을 중심으로 게이트 패턴의 미세화가 진행 중이다. 최근 100 nm 이하의 선폭을 구현하기 위해서 ONO(oxide-nitride-oxide)를 사용하기 위한 연구가 개발 중이고, 이러한 100 nm이하의 미세 선폭으로 갈수록 식각 속도와 식각의 프로파일은 중요한 요인으로 작용하고 있다. ICP 식각 장비를 이용하여, power를 50 W 증가 하였을 때, 각각 식각 속도와 포토레지스트와의 선택비를 확인 한 결과 platen power를 100 W로 올렸을 경우 가장 좋은 결과를 나타내었다. 100 W에서 HBr가스의 유량에 변화를 주었을 경우 가스의 양을 증가 할수록 식각 속도는 감소하였지만, 포토레지스트와의 선택비는 증가함을 보였다. 유도결합 플라즈마 식각 장비를 가지고 platen power를 100 W, HBr gas를 35 sccm 공급하여 하부 층에 노치가 형성이 안되고, 식각 속도 320 nm/min, 감광액과의 선택비 3.5:1, 측면식각 프로파일이 수직인 공정 조건을 찾았다. Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.