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MgO가 첨가된 $Ba_{0.5}Sr_{0.5}TiO_3$ 후막의 구조 및 유전 특성
강원석,남성필,고중혁,이성갑,이영희,Kang, Won-Seok,Nam, Sung-Pil,Koh, Jung-Hyuk,Lee, Sung-Gap,Lee, Young-Hie 대한전기학회 2006 전기학회논문지C Vol.55 No.12
Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.
Yb<sub>2</sub>O<sub>3</sub>가 첨가된 (Ba<sub>1</sub>Sr<sub>1</sub>Ca)TiO<sub>3</sub>후막의 치밀화와 유전특성
박상만,이영희,남성필,이성갑,Park, Sang-Man,Lee, Young-Hie,Nam, Sung-Pil,Lee, Sung-Gap 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.
MgO가 첨가된 Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO₃ 후막의 구조 및 유전 특성
姜元?(Won-Seok Kang),南成必(Sung-Pil Nam),高重赫(Jung-Hyuk Koh),李成甲(Sung-Gap Lee),李永熙(Young-Hie Lee) 대한전기학회 2006 전기학회논문지C Vol.55 No.12
Using the Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO₃(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the Al₂O₃ substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with 1~10 wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 ㎒.
김대영(Dae-Young Kim),조서현(Seo-Hyun Jo),정광호(Gwang-Ho Jeong),김다미(Da-Mi Kim),남성필(Sung-Pil Nam),이성갑(Sung-Gap Lee) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.11
Pb(Zr,Tj)O₃/BiFeO₃/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO₂/Si substrates by chemical solution deposition. With increasing the number of BFO coating solution, the leakage current density properties of multilayered PZT/BFO thin films were improved. The value of the PZT/BFO-4 film was about l89.39(x10?? A/㎠) at 10V.