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남기령,정준교,성재영,이가원 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.3
Retention characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory are aff ected by properties such as energy level and spatial location. In this study, a model was presented that separately evaluated the bulk and interface trap level density distributions in the SONOS nonvolatile memory charge trapping layer (CTL). This model is proposed in the form of a fi rst-order function of nitride thick X N , so the bulk and interface trap densities, g bulk and g interface , respectively, can be extracted from the slope and y-intercept. Measurements were performed on various thickness samples. For verifi cation, CTL1 and CTL2 were formed by diff erent processes. The extracted CTL1 g bulk and g interface are on the order of 10 17 cm −3 and 10 11 cm −2 , and the CTL2 g bulk and g interface are of the order of 10 18 cm −3 and 10 12 cm −2 , respectively. Using this model, a direction to improve the SONOS device retention characteristics can be suggested.
Extraction of Effective Charge Diffusivity in the Charge Trapping Layer of SONOS Flash Memory
성재영,정준교,남기령,이가원 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this study, the effective electron diffusivity in a silicon nitride is extracted experimentally explaining the lateral charge migration in Silicon-Oxide-Nitride-Oxide-Silicon memory device whose charge trapping layer is formed continuously along the memory string. The diffusivities were compared in two types of silicon nitride by changing the deposition conditions. The enhanced charge loss is found to be related with the Si–O–N bonding which shows 5.28% versus 23.72%, analyzed by X-ray photoelectron spectroscopy and larger shallow trap density by the thermal activated electron retention model. The analysis results show that less oxygen bonds are more favorable in data retention properties suppressing the lateral charge migration and this can be represented by lower diff usivity about 3.8 × 10 –11 –5.1 × 10 –10 cm 2 /s.