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Is FAM19A5 an adipokine? Peripheral FAM19A5 in wild-type, FAM19A5 knockout, and LacZ knockin mice
성재영,Hoyun Kwak,Eun-Ho Cho,Yoo-Na Lee,Anu Shahapal,Hyo Jeong Yong,Arfaxad Reyes-Alcaraz,Yongwoo Jeong,Yerim Lee,Minhyeok Lee,Nui Ha,Sitaek Oh,Jae Keun Lee,Won Suk Lee,Won Kyum Kim,Sangjin Yoo,Soon-Gu K 한국분자세포생물학회 2024 Molecules and cells Vol.47 No.1
FAM19A5 is a novel secretory protein expressed primarily in the brain. However, a recent study reported that FAM19A5 is an adipocyte-derived adipokine that regulates vascular smooth muscle function through sphingosine-1-phosphate receptor 2 (S1PR2). In our study, we investigated FAM19A5 transcript and protein levels in peripheral tissues, including adipose tissues, from wild-type, FAM19A5 knockout, and FAM19A5-LacZ knockin mice. We found that the FAM19A5 transcript levels in the central nervous system were much greater than those in any of the peripheral tissues, including adipose tissues. Furthermore, the FAM19A5 protein levels in adipose and reproductive tissues were below detectable limits for Western blot analysis and enzyme-linked immunosorbent assay (ELISA). Additionally, we found that the FAM19A5 protein did not interact with S1PR2 in terms of G-protein-mediated signal transduction, β-arrestin recruitment, or ligand-mediated internalization. Taken together, our findings revealed basal levels of FAM19A5 transcripts and proteins in peripheral tissues, confirming its primary expression in the central nervous system and lack of significant interaction with S1PR2.
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SONOS NAND 플래시 메모리 소자에서의 lateral charge migration에 의한 소자 안정성 연구
성재영,정준교,이가원 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.4
As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si3N4) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.
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Extraction of Effective Charge Diffusivity in the Charge Trapping Layer of SONOS Flash Memory
성재영,정준교,남기령,이가원 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this study, the effective electron diffusivity in a silicon nitride is extracted experimentally explaining the lateral charge migration in Silicon-Oxide-Nitride-Oxide-Silicon memory device whose charge trapping layer is formed continuously along the memory string. The diffusivities were compared in two types of silicon nitride by changing the deposition conditions. The enhanced charge loss is found to be related with the Si–O–N bonding which shows 5.28% versus 23.72%, analyzed by X-ray photoelectron spectroscopy and larger shallow trap density by the thermal activated electron retention model. The analysis results show that less oxygen bonds are more favorable in data retention properties suppressing the lateral charge migration and this can be represented by lower diff usivity about 3.8 × 10 –11 –5.1 × 10 –10 cm 2 /s.
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