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김준동(Joondong Kim),한창수(Chang-Soo Han) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.4
태양전지는 태양의 입사빛을 전기에너지로 바꾸는 소자로서, 최근의 에너지 고갈과 화석연료의 사용으로 야기되는 지구온난화 문제를 해결할 수 있는 대체에너지 수단으로 각광을 받고 있다. 본 연구에서는 실리콘 박막과 실리콘 나노와이어를 이용한 태양전지에 대한 논의를 한다.
MoO<sub>3</sub> 기반 실리콘 이종접합 IR 영역 광검출기 개발
박왕희,김준동,최인혁,Park, Wang-Hee,Kim, Joondong,Choi, In-Hyuk 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.8
Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.
박왕희,김준동,Park, Wang-Hee,Kim, Joondong 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.11
Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.
MoS<sub>2</sub> 두께 변화에 따른 MoS<sub>2</sub>/p-Si 광센서 특성 연구
김홍식,김준동,Kim, Hong-Sik,Kim, Joondong 한국태양광발전학회 2017 Current Photovoltaic Research Vol.5 No.4
Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.