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황화물계 3가 크롬도금욕에서 크롬-탄소 및 크롬-탄소-인합금도금의 전착과 결정화거동
김만(M. Kim),김대영(D. Y. Kim),박상언(S. U. Park),권식철(S. C. Kwon),최용(Y. Choi) 한국표면공학회 2004 한국표면공학회지 Vol.37 No.2
Chromium-carbon (Cr-C) and chromium-carbon-phosphorus (Cr-C-P) alloy deposits using trivalent chromium sulfate baths containing potassium formate were prepared to study their current efficiency, hardness change and phase transformations behavior with heat treatment, respectively. The current efficiencies of Cr-C and Cr-C-P alloy deposits increase with increasing current density in the range of 15-35 A/dm². Carbon content of Cr-C and phosphorous of Cr-C-P layers decreases with increasing current density, whereas, the carbon content of Cr-C-P layer is almost constant with the current density. Cr-C deposit shows crystallization at 400℃ and has (Cr+Cr₂₃C?) phases at 800℃. Cr-C-P deposit shows crystallization at 600℃ and has (Cr+Cr₂₃C?+Cr₃P) phases at 800℃. The hardness of Cr-C and Cr-C-P deposits after heating treatment for one hour increase up to Hv 1640 and Hv 1540 and decrease about Hv 820 and Hv 1270 with increasing annealing temperature in the range of 400~800℃, respectively. The hardness change with annealing is due to the order of occurring of chromium crystallization, precipitation hardening effect, softening and grain growth with temperature. Less decrease of hardness of Cr-C-P deposit after annealing above 700℃ is related to continuous precipitation of Cr₂₃C? and Cr₃P phases which retard grain growth at the temperature.
김동수(D. Kim),김만(M. Kim),박상언(S. U. Park),남기석(K. S. Nam),장도연(D. Y. Chang),권식철(S. C. Kwon),신동수(D. S. Shin) 한국표면공학회 2001 한국표면공학회지 Vol.34 No.1
The addition of organic compound containing -COOH, -CONH₂, -CHO group such as formic acid, formamide, formaldehyde or diethyleneamine to a chromium electroplating bath results in a chromium deposit in which carbon is incorporated. Such deposits have fewer defects than chromium layers produced by a conventional method. It was found that the as-deposited layers were amorphous and auger electron spectroscopy (AES) showed that carbon is distributed uniformly in the deposit. During heat treatment, Cr-C deposits began to crystallize at 400℃, and at 800℃ they were crystallized into chromium carbides and oxides. The effects of current density, amount of additives, applied current waveform on Cr-C alloy electroplating were examined.
허명수(M. S. Huh),최승우(S. W. Choi),천희곤(H. G. Chun),권식철(S. C. Kwon),이건환(G. H. Lee),조동율(T. Y. Cho) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.1
DC Magnetron Sputtering 방법으로 원기둥형 Alumina기판 (직경 4 ㎜, 길이 11 ㎜) 상에 부(-)의 TCR특성의 TaN_(0.1)(부도체)와 정(+)의 TCR특성의 Cr(금속) 박막두께를 적절히 조절하므로써 초정밀 저항기를 제조하였다. 그리고 면저항 (Rs)을 1㏀/수준으로 높이고 보호막을 형성키 위하여 상부에 Ta₂O_5 막을 입혀 Ta₂O_5/TaN_(0.1)/Cr/Al₂O₃(substrate)의 다층 박막저항체를 제조하였다. 적절한 조건(기판온도, N₂(g), Ar(g)의 유속 등)으로 상기 다층박막내 각 막의 두께를 약 10,100과 500 ㎚ 두께로 증착했을 때, Rs? 1㏀/□와 TCR?20±5 ppm/C의 초정밀 저항체가 제조되었다. Super precision resistor was manufactured by controlling properly the thickness of TaN_(0.1)(negative TCR) and Cr(positive TCR) deposited on cylindrical alumina substrate (diameter: 4 ㎜, length: 11 ㎜). Multilayer thin film resistor of Ta₂O_5/TaN_(0.1)/Cr/Alumina (substrate) was manufactured by depositing of Ta₂O_5, film on TaN_(0.1) film to increase Rs to the level of 1 ㏀/□ and to passivate the film. Super precision resistor with TCR of 20±5 ppm/C and Rs of 1 ㏀/□ was manufactured by depositing thin layers of about 10 ㎚ Ta₂O_5 100 ㎚ TaN_(0.1) and 50 ㎚ Cr film under the properly controlled sputtering condition.