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권경욱 ( Kwon-kyung Wook ),엄재경 ( Eom-jae Kyeong ),최지우 ( Choi-ji Woo ) 한국정보처리학회 2023 한국정보처리학회 학술대회논문집 Vol.30 No.2
라즈베리파이와 아두이노의 성공적인 실시간 데이터 송수신, 운전자에게 시각적 효과를 줄 수 있는 맞춤형 이산화탄소 농도 데이터 LCD, 자동 환기 시스템 및 쿨링 시트 가동 기능을 통합하여 졸음운전을 방지할 수 있는 시스템을 제안하고자 한다.
Pseudo MOSFET을 이용한 Nano SOI 웨이퍼의 전기적 특성분석
배영호,김병길,권경욱,Bae, Young-Ho,Kim, Byoung-Gil,Kwon, Kyung-Wook 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.
0.35um BCD 공정을 이용한 700V Double Resurf LDMOS Transistor 구현
문남칠(Nam-Chil Moon),전본근(Bon-Keun Jun),권경욱(Kyung-Wook Kwon),이창준(Chang-Jun Lee),김종민(Jong-Min Kim),김남주(Nam-Joo Kim),유광동(Kwang-Dong Yoo) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
We have developed nLDMOS with over 800V BV based on 0.35um technology using Double RESURF (REduced SURface Field) technology without extra layers & Epi wafer. This device is applied to power switch and level shifter for HVIC such as LED lighting, motor control IC, etc. Also, this paper presents the optimization condition for wide RESURF region regarding a robust breakdown voltage and low specific on-resistance.