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고밀도 평판형 유도결합 BCl<sub>3</sub>/SF<sub>6</sub> 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 선택적 식각에 관한 연구
유승열,류현우,임완태,이제원,조관식,전민현,송한정,이봉주,고종수,고정상,Yoo Seungryul,Ryu Hyunwoo,Lim Wantae,Lee Jewon,Cho Guan Sik,Jeon Minhyon,Song Hanjung,Lee BongJu,Ko Jong Soo,Go Jeung Sang,Pearton S. J. 한국재료학회 2005 한국재료학회지 Vol.15 No.3
We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.