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Fabrication of the Recrystallized Poly Silicon nMOSFET and Its Electrical Characteristics
김주영,강문상,김기홍,구용서,안철,Kim, Joo-Young,Kang, Moun-Sang,Kim, Gi-Hong,Ku, Yong-Seo,An, Chul The Institute of Electronics and Information Engin 1992 전자공학회논문지-A Vol.29 No.11
The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.
Electrical Characteristics of the Poly-Si TFT using SPC Films after Si Ion Implantation
이병주,김재영,강문상,구용서,안철,Lee, Byoung-Ju,Kim, Jae-Yeong,Kang, Moun-Sang,Koo, Yong-Seo,An, Chul The Institute of Electronics and Information Engin 1993 전자공학회논문지-A Vol.30 No.10
N-channel TFTs fabricated on the pre-amorphized (by Si ion implantation) and recrystallized Si film having 10.1V threshold voltage, 20.7cm$^{2}$/V$\cdot$s field effect mobility and ~10$^{5}$/ ON/OFF ratio, whowed improved characteristics comparing to those obtained from the as-deposited (by LPCVD) poly Si film which had 11.2V, 9cm$^{2}$/V$\cdot$s and ~10$^{4}$ respectively.