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스퍼터링시 수소첨가가 MIS 소자용 AIN 절연박막의 전기적특성에 미치는 영향
권정열(Jung Youl Kwon),이환철(Hwan Chul Lee),이헌용(Heon Yong Lee) 한국수소및신에너지학회 1999 한국수소 및 신에너지학회논문집 Vol.10 No.1
AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5m Torr, flow rate ratio of Ar/N₂=1, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.
BTS 방법을 사용한 Low-K 유전체 물질들과 산화막의 Cu 드리프트 확산에 대한 비교 연구
추순남,권정열,김장원,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Kim, Jang-Won,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.
반응성 스퍼터링법으로 AI/AIN/GaAs 커패시터 제조시 (NH<sub>4</sub>)<sub>2</sub>S 처리에 따른 전기적 특성
추순남,권정열,박정철,이헌용,Chu, Soon-Nam,Kwon, Jung-Youl,Park, Jung-Cheul,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1
In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.
염료감응형 태양전지의 탄소대항전극 제조 시 바인더 함량 변화에 따른 전기적 특성
이현석,김성준,권정열,박정철,이헌용,Lee, Hyeon-Seok,Kim, Seong-Jun,Kwon, Jung-Youl,Park, Jeong-Cheol,Lee, Heon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4
In this paper, we studied counter electrodes that carbon materials is used for dye-sensitized solar cells. Carbon electrodes characterized by changing of CMC wt. %. We investigated a porous structure of electrodes and a specific resistance of carbon electrodes for identification of electric conductivity. The specific resistance of carton electrodes increased by an increase of CMC wt. % and this result affected an efficiency of the cells.
반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘
秋順男(Soon-Nam Chu),朴正哲(Jung-Cheul Park),權廷烈(Jung-Youl Kwon),李憲用(Heon-Yong Lee) 대한전기학회 2007 전기학회논문지 Vol.56 No.4
We have studied the variable conditions of reactive sputtering to prepare AIN thin film. The leakage current showed below 10??A/㎠ at the deposition temperature of 250℃ and 300℃ in the field of 0.1 ㎹/㎝, and it was gradually increased and to be saturated in 0.2 ㎹/㎝. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 ㎹/㎝, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.
유전체 공진기를 이용한 개인휴대 통신용 대역통과 필터의 설계 및 구현
권정열,이헌용,홍성용,윤중락 明知大學校 産業技術硏究所 1996 産業技術硏究所論文集 Vol.15 No.-
In this paper, the band pass filter for personal communication services was constructed and designed using λ/4 TEM mode dielectric resonators with a (Zr0.65,Sn0.35)ATi1.04O4.04 ceramic of dielectric constant εr=37.8, Qxfo=48.600 temperature coefficient of resonant frequency rf=7ppm/˚C, and Unloaded-Q (Qo) of λ/4 TEM mode dielectric resonator with inner hole size 0.9㎜ and external size 3㎜ using silver electrode is 354.5 at 1950MHz. For the band pass filter design and construction, the design theory and simulation results of band pass filter using J-inverter theory have been studied. The parameters which are evaluated by design theory are practically applied to the filter construction and the simulation results are in agreement with the measured results after fine tunnings.
PLASMA CVD 방법에 의한 SILICON OXYNITRIDE막의 특성에 관한 연구
이헌용,권정열,서강원 明知大學校 産業技術硏究所 1994 産業技術硏究所論文集 Vol.13 No.-
Silicon oxynitride films deposited by plasma enhanced chemical vapor deposition have been studied as a passivation and inter-layer for ULSI devices, because they have high resistance to humidity, low film stress and prevent from penetrating of alkali ions. In this paper, We were also evaluated oxynitride films by deposition and etching rate characteristics, FT-IR and SIMS analysis, and dielectric breakdown strength.