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Electron Cyclotron Resonance O_2 Plasma에서 증착한 규소 산화 박막의 특성
안명환,서문석,장재선,서성모,이기방,윤창주,이형재,남기석,최규현,손춘배,김용섭,강석희 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.17 No.-
규소 산화막을 ECR-CVD(electron cyclotron resonance-chemical vapor deposition) 증착방법으로 5인치 기판위에 상온에서 증착하고, 증착공정조건인 증착율, 기판온도, 마이크로파의 세기변화 및 플라즈마 혼합기체의 비에 따른 규소 산화막의 특성을 조사하였다. 또한 산화막의 구조적인 특성을 비교하기 위해 FTIR을 이용하여 ECR-CVD 증착한 산화막, RPE-CVD(remote plasma enhanced-CVD) 증착한 산화막 및 열 산화막의 stretching frequency를 측정하였다. 측정된 결과 ECR-CVD로 증착된 산화막이 구조적인 면에서 열 산화막과 거의 같음을 보였다. ECR-CVD로 증착된 산화막의 전기적인 특성을 전류-전압 및 축전-전압 측정에의하여 분석하였다. 축전된 산화막의 전기적인 특성은 산화막의 전하 밀도는 1×10 exp (11)/㎠이였고, 평균 절연 파괴 전압은 약 6 MV/㎝이다. We have grown thin films of SiO_2 at room temperature by using an ECR-CVD system and have investigated the changes in the properties of the deposited films with changes in the processing conditions such as the deposition rate, the substrate temperature, the microwave power and the plasma gas mixing ratio. We also measured the stretching frequency of three kinds of oxides, and ECR-CVD-grown oxide, a PECVD-grown oxide, and a thermally grown oxide, using FTIR analysis to compare their structural properties. The result shows that the structural properties of the ECR-grown oxide are similar to those of the thermally grown oxide. Additionally, the electrical properties of the ECR-grown oxide were investigated by using current-voltage and capacitance-voltage measurements. These electrical results indicate that the oxide charge density and the average breakdown voltage are 1×10 exp (11) ㎝^-2 and 6 MV/㎝, respectively.
Catalytic Effect of Metal Elements on the Growth of GaN and Mg-doped GaN Micro-Crystals
Nahm, Kee Suk,Kim, Tae Yun,Lee, Sang Hyun 한국화학공학회 2003 Korean Journal of Chemical Engineering Vol.20 No.4
Catalytic effect of metal elements was observed in the growth of GaN and Mg-doped GaN micro-crystals. High quality GaN micro-crystals were synthesized by direct reaction of gallium and ammonia using a Ni-mesh catalyst. Mg-doped GaN micro-crystals were also grown by the same reaction scheme in the presence of MgCl₂. The growth rate of GaN micro-crystals markedly increased in the presence of the catalyst. The average grain size of GaN microcrystals synthesized in the presence of Ni and Mg metals was larger than that in the absence of the metals. The characterization of the catalytically grown GaN micro-crystals using transmission electron microscopy and X-ray and/or electron diffraction pattern showed the growth of dislocation free hexagonal GaN micro-crystals. Photoluminescence (PL) and Catholuminescence (CL) measurements also showed the growth of good quality n- and p-type GaN microcrystals using Ni catalyst
( Kee Suk Nahm ),( Tae Yun Kim ),( Sang Hyun Lee ) 한국화학공학회 2003 Korean Journal of Chemical Engineering Vol.20 No.4
Catalytic effect of metal elements was observed in the growth of GaN and Mg-doped GaN micro-crystals. High quality GaN micro-crystals were synthesized by direct reaction of gallium and ammonia using a Ni-mesh catalyst. Mg-doped GaN micro-crystals were also grown by the same reaction scheme in the presence of MgCl₂. The growth rate of GaN micro-crystals markedly increased in the presence of the catalyst. The average grain size of GaN microcrystals synthesized in the presence of Ni and Mg metals was larger than that in the absence of the metals. The characterization of the catalytically grown GaN micro-crystals using transmission electron microscopy and X-ray and/or electron diffraction pattern showed the growth of dislocation free hexagonal GaN micro-crystals. Photoluminescence (PL) and Catholuminescence (CL) measurements also showed the growth of good quality n- and p-type GaN microcrystals using Ni catalyst
Kee, Suk Nahm,Yang, Seung Hyun,Ahn, Sang Hyung 한국화학공학회 2000 Korean Journal of Chemical Engineering Vol.17 No.1
Thick GaN films were grown on sapphire by the direct reaction of metallic Ga and ammonia in a conventional RF induction heated chemical vapor deposition reactor. The crystalline and optical qualities of the thick GaN were evaluated as functions of the distance between sapphire substrate and Ga source and growth temperature. For thick GaN grown at the position of 3.5 cm away from the Ga source, the FWHM for the (0002) peak of X-ray diffraction (XRD) curve was about 684 arcsec. The growth rate of the thick GaN film was about 18 ㎛/h at this growth condition. The correlation between structural and optical properties of thick GaN films suggested that deep level yellow luminescence (YL) had a close relation with (1010) and (1011) planes developed in the growth. It was speculated that the emission of YL is mainly due to the formation of deep gap state in the band gap by Ga vacancy and impurities trapped at the domain boundary with (1010) and (1011) atomic facets.