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송요순,김도형 전남대학교 촉매연구소 2001 觸媒硏究 論文集 Vol.22 No.-
Heterogeneous nucleation rate of water vapor on smooth surfaces, e. g. an immiscible liquid surface was investigated. The nucleation and growth of condensate nuclei could occur both by the direct addition of molecules from the vapor and from those adsorbed on the substrate. The vapor-condensate-substrate interfacial force, the critical supersaturation, number of adsorbed molecules were different ways of expressing the affinity between vapor molecules and substrate surface. We found that adsorbed molecules were usually far more important to the nucleation process than those in the vapor phase. The heterogeneous nucleation rate of water vapor on some liquid surfaces was studied also. The critical supersaturation was measured differently with interfacial tension. There were a little bit differences between Volmer theory and experimental values.
Kim, Do Heyoung,Kim, Byung Yup 한국화학공학회 2000 Korean Journal of Chemical Engineering Vol.17 No.4
Aluminum films were prepared on H₂-plasma pretreated TiN substrates at deposition temperatures of 60-250℃ by metallorganic chemical vapor deposition using dimethylethylamine alane as a precursor. The films were highly pure and the growth rates were 3-50 nm/min, where the lowest deposition temperature was 60℃. The resistivity was as low as 2.8 μΩcm. High substrate temperatures tended to favor a low resistivity and smooth surface morphology of the films, compared to films with a ow temperature at a given thickness. Numerous empty pores appeared in the A1 films deposited at a temperature below 150℃ when the film thickness exceeded 200 nm. The number of these pores tended to increase with decrease in temperature. However, in films deposited at temperatures above 200, there were no pores and the large grains were interconnected to a high degree. Higher deposition temperatures yielded a greater preference of the (111) orientation of Al films.
Iron oxide grown by low-temperature atomic layer deposition
Do-Heyoung Kim,Seenivasan Selvaraj,Hee Moon,Ju-Young Yun 한국화학공학회 2016 Korean Journal of Chemical Engineering Vol.33 No.12
Atomic layer deposition (ALD) is a promising technology for fabricating conformal thin films of atomlevel thickness with chemical composition control over a variety of structures. This paper demonstrates the ALD of iron oxide thin films using a novel iron precursor, namely, bis[bis(trimethylsilyl)amide]iron [Fe(btmsa)2] and hydrogen peroxide as an oxygen source. The growth characteristics of iron oxide were investigated by varying the deposition temperatures from 100 to 225 oC, such that the ALD growth mode was observed at 150 to 175 oC with an average growth rate of 0.035±0.005 nm/cycle. The films deposited in ALD mode exhibited highly linear film thicknesses with the number of cycles and excellent conformality over high-aspect-ratio trenches. In addition, the deposited films were extremely pure and revealed a hematite phase without any subsequent heat treatment, even if the films were deposited at low temperatures.
Synthesis and characterization of poly(alkoxysilane)s catalyzed by Co/Ni colloidal nanoparticles.
Kim, Myoung-Hee,Woo, Hee-Gweon,Kim, Do-Heyoung,Yang, Kap-Seung,Kim, Bo-Hye,Ko, Young Chun,Sohn, Honglae American Scientific Publishers 2010 Journal of Nanoscience and Nanotechnology Vol.10 No.5
<P>Si-Si/Si-O dehydrocoupling of hydrosilanes with alcohols (1:1.5 mole ratio), catalyzed by group VIII metallocenes Cp2M' (M' = Co, Ni) which converted to Co(O)/nickel(O) colloidal nanoparticles, produced poly(alkoxysilane)s in one-pot in high yield. The hydrosilanes include p-X-C6H4SiH3 (X = H, CH3, OCH3, F), PhCH2SiH3, and (PhSiH2)2. The alcohols include MeOH, EtOH, 'PrOH, PhOH, and CF3(CF2)2CH2OH. The weight average molecular weight of the poly(alkoxysilane)s were in the range of 600 to 8100. The dehydrocoupling reactions of phenylsilane with ethanol (1:3 mole ratio) in the presence of the nanocolloid catalyst gave only triethoxyphenylsilane as product.</P>
Nucleation and Film Growth of Chemically Vapor Deposited Tungsten on Various Types of TiN Glue Layer
Kim, Do-Heyoung,Song, Yo-Soon,Whang, Soon-Hong,Park, Jin-Won 전남대학교 촉매연구소 2001 觸媒硏究 論文集 Vol.22 No.-
The morphology and grain size of CVD W on MOCVD TiN films was investigated by varying the types of TiN glue layer. The morphology and grain size of W layer were found to be dependent upon the type of TiN glue layer adopted. W deposited on the non post-treated CVD-TiN exhibits lowest roughness levels with small grain size among the tested TDMAT-based TiN films. Also, the effects of rapid thermal annealing on the conformal properties of chemically vapor deposited W films were investigated with the contact-structure covered by TiN films. We found that out gassing from the TiN film is closely related with the step coverage of CVD W films. This out-gassing from TiN films was greatly reduced by the rapid thermal annealing of CVD TiN films at 650℃ for 30 sec in a N2 atmosphere, which increased step coverage of CVD W films to in excess of 90%, even at the relatively high W deposition temperature of 475℃.
Preparation of antimony films by cyclic pulsed chemical vapor deposition.
Kim, Yeon-Hong,Lim, Gyeong Taek,Kim, Bo-Hye,Ko, Hang Ju,Woo, Hee-Gweon,Kim, Do-Heyoung American Scientific Publishers 2008 Journal of Nanoscience and Nanotechnology Vol.8 No.10
<P>Cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) for the formation of antimony (Sb) thin films was investigated using Sb(i-C3H7)3 and H2 plasma at temperatures of 200-275 degrees C. The effects of deposition temperature on the film properties, such as resistivity, surface roughness, and crystallinity were examined. The film growth rate (thickness/cycle) was found to be in the range of 0.10-0.5 nm/cycle. High substrate temperatures tended to promote low resistivity, high purity, and smooth surface morphology of the films, compared to low substrate temperatures. All of the deposited films were polycrystalline, with higher deposition temperatures yielding a higher crystallinity in the Sb films.</P>
Kim, Young Soo,Park, Jin Won,Lee, Wan Jin,Kim, Do Heyoung,Kim, Jun Ki,Cho, Dong Lyun,Song, Yo Soon 대한금속재료학회(대한금속학회) 2000 METALS AND MATERIALS International Vol.6 No.6
The dependence of CVD W growth on various types of TiN layers was investigated with blanket and patterned wafers. There were no appreciable effects of the properties of TiN on the resistivity, structure, growth rate or reflectivity of CVD W in the case of blanket wafers; however, the stress of the W layer was found to be dependent upon the type of TiN glue layer adopted. W deposited on the TDMAT-TiN glue layer exhibits the lowest stress levels among the tested TiN films. TiCl₄-TiN proved to be superior to TDMAT-TiN from the viewpoint of W conformality. Although there was no appreciable effect of deposition temperature silane reduction time, contact size or shape of contact upon the W conformality on a TiCl₄-TiN layer, the W conformality on TDMAT-TiN was highly dependent on the above parameters, apparently caused by insufficiently plasma treated TiN on the side walls of contacts.
Kim,Do Heyoung,Lee,Young J.,Pair,Chong Ook,Park,Jin Won,Kim,Jae Jeong 대한전자공학회 1995 ICVC : International Conference on VLSI and CAD Vol.4 No.1
In this paper, the nucleation and film growth of copper on TiN chemically treated with WF_6 and air-exposed TiN by chemical vapor deposition(CVD) from hexafluoroacetylacetonate copped trimethylvinylsilane, (NFA)Cu(TMVS), was studied. Copper grows as islands of poorly connected grains on air-exposed TiN. In contrast, copper grows as a continuous film with well-connected grains on the surface of WF_6-treated TiN. The role of the TiN surface condition has been examined using Auger electron spectroscopy(AES), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy(SEM).
One-pot synthesis and characterization of silver/polyphenylsilane hybrid nanocomposites.
Kim, Bo-Hye,Kim, So-Yeun,Kim, Myoung-Hee,Woo, Hee-Gweon,Kim, Do-Heyoung,Jun, Jin,Sohn, Honglae American Scientific Publishers 2008 Journal of Nanoscience and Nanotechnology Vol.8 No.10
<P>The synthesis and characterization of spherical silver/polyphenylsilane (PPS) hybrid nanocomposites were carried out. A one-step conversion of metallic salts to stable metal nanoparticles was possible by a simple and mild PPS-mediated method. TEM (transmission electron microscopy) and FE-SEM (field emission scanning electron microscopy) data confirm the formation of the hybrid nanocomposites in which large numbers of silver nanoparticles (< 30 nm) are dispersed throughout the PPS matrix. XRD (X-ray diffraction) patterns are consistent with that for fcc-typed silver. The size and processability of such nanoparticles depend on the metal to PPS ratio. The PPS with Si-H functionalities play an important role as a reducing agent and as a stabilizing agent in the formation of the silver nanostructures. In the absence of the polymer, most of the silver particles underwent macroscopic precipitation.</P>