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Zihan Zhou,Yunwen Wu,Huiqin Ling,Jie Guo,Su Wang,Ming Li 한국공업화학회 2023 Journal of Industrial and Engineering Chemistry Vol.119 No.-
3D NAND flash memory with vertically stacked cells has been developed to break through the limits oftechnology nodes. However, during the selective etching process, it is difficult to ensure the byproductsdiffuse away from the trenches in the multistacked layers. Once saturated, the byproduct causes abnormalredeposition on the SiO2 layers. This problem has restricted the development of high-density 3DNAND memory. To solve this problem, the composition and formation mechanism of the redepositedlayer must be clarified. In this study, a ternary-wafer system comprising a Si3N4/SiO2/Si3N4 stack was fabricatedto study the redeposition mechanism, and the morphology, elastic properties, and chemical compositionof the redeposited layer were clarified. The redeposited layer consists of spherical particles withelastic surfaces (average Young’s modulus of 24.17 GPa). The particles were confirmed to comprise colloidalsilica gel covered by silanols. By considering the chemistry of silica, the redeposition mechanismwas proposed as follows: colloidal silica gel is formed by the aggregation of silicic acids from Si3N4 etching,which adsorb onto the SiO2 layer through oxide bridges and hydrogen bonding. Our work will contributeto the development of high-density 3D NAND memory.
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Hua Hu,Ruoxun Zhang,Yunwen Wu,Huiqin Ling,Tao Hang,Ming Li 대한금속·재료학회 2022 ELECTRONIC MATERIALS LETTERS Vol.18 No.1
As the size of interconnect technology in integrated circuits keeps minimizing, the electrical resistivity and signal transmission delay become increasingly serious. The monocrystalline materials can meet the requirements of miniaturization and high-speed interconnection, which is a proper solution of these problems. Hence, we fabricated large monocrystalline Cu cones with (111) orientation using a linear sweep voltammetry electroplating method for the first time. It was found that phosphorus could induce texturization of polycrystals at a certain potential. The grains with uniform orientation grown into single crystals through the oriented attachment growth mechanism. The screw dislocations produced during oriented attachment led to crystal spiral growth, developing into large monocrystalline cones. This work is expected for application in copper interconnect technology in the future.
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Lingyue Tan,Silin Han,Shuhui Chen,Tao Hang,Huiqin Ling,Yunwen Wu,Ming Li 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.2
Thermal treatment is an effective way to decrease the resistivity and internal stress by inducing grain growth accompaniedwith redistribution of embedded impurities. With the narrowing of Cu interconnects in IC packaging, the increased resistanceis becoming the main issue that hindering the electrical performance of IC. Herein, a laser annealing method by linerscanning (LALS) to anneal the Cu interconnects were reported which provide a gradient thermal field for the crystallographic/microstructure transition. The impacts of laser annealing on the sheet resistance of the electroplating Cu films wereinvestigated in aspects of microstructure and phase field simulation. Cu films treated by LALS owned larger average grainsize, better recrystallization fraction, and significantly higher average grain aspect ratio than conventional annealing, whichindicated the increased driving force for grain boundaries evolution by LALS method. This study exhibited the direct evidenceon the impacts of laser annealing process on the resistance of electroplated Cu films. The laser annealing process witha local temperature gradient caused a significant decline in Cu electrical resistance compared to the conventional annealingprocess, indicating its extraordinary potential in improving Cu wire conductivity. This work will provide a scientific basis forselecting the post-treatment process for electrodeposited Cu films to achieve ideal electrical properties and microstructurein electronics industry applications.
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Yaqian Sun,Jing Wang,Xundi Zhang,Chenlin Yang,Anmin Hu,Tao Hang,Yunwen Wu,Huiqin Ling,Ming Li 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.6
At present, thermal compression bonding based on Cu and lead-free Sn based solder is often limited by high bonding temperature,which is higher than the melting point of solder (218 ℃). In this paper, we reported a low-temperature solid stateinsertion bonding method based on electroless Cu-Co-P micro-cones array. By adjusting the mass ratio of CuSO 4 ·5H 2 O andCoSO 4 ·7H 2 O, a series of Cu-Co-P micro-cones with diff erent morphologies were prepared. The Cu-Co-P micro-cones withhigher proportion of copper were sharper and denser and (111) orientation was also more. It was found that reducing theheight and density of micro-cones was conducive to achieve seamless bonding at lower temperature and force such as 170℃ and 750 gf. By optimizing the morphology of micro-cones, such as height, bottom diameter, vertex angle and density, theseamless and reliable bonding with high shear strength (39.9 MPa) could be achieved at 170 ℃ bonding temperature and1000 gf bonding force. The transmission electron microscopy results showed that intermetallic compounds including Cu 6 Sn 5and Cu 3 Sn existed at bonding interface, which indicated that signifi cant atomic diff usion had occurred between Cu-Co-Pmicro-cones and Sn based solder. Probable mechanisms for low-temperature insertion bonding were discussed.
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