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김영진,박욱동,김기완,오상광,마대영 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
Using RF reactive sputtering method, silicon dioxide(SiO_(2)) thin films have been fabricated on p-type(100) Si wafer. The electrical properties of SiO_(2) thin films have been examined by C-V and I-V measurement. The properties of SiO_(2) thin films on RF power, substrate temperature, O_(2)/Ar+O_(2)ratio and working pressure have been shown differently. The maximum dielectric constant of SiO_(2) thin film was about 2.0 at conditions that the RF power, substrate temperature, O_(2)/Ar+O_(2) and working pressure was 160W, 10%, 250°C and 100mTorr, respectively. This SiO_(2) thin film is expected to be used as the, image sensor blocking layer and TFT gate oxide.
PLT 절연층을 이용한 ZnS:Mn TFEL소자의 제조 및 특성
박욱동,박경빈,박재현,김영진,최병진,김기완 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Thin film electroluminescent(TFEL) device has been fabricated using ZnS:Mn phosphor and PLT insulator. The ZnS:Mn and PLT thin film for TFEL device was deposited by vacuum evaporation method and RF magnetron sputtering method, respectively. The TFEL device using ZnS:Mn(6000 Å) and PLT(1000 Å) thin films showed the threshold voltage of 50 Vrms at the driving frequency of 3 kHz. The brightness of TFEL device was 250 μW/cm^(2) at the applied voltage of 74 Vrms. Also the output current of TFEL device was linearly increased with applied voltage.
CURRENT STATUS OF SILICIDE MATERIALS FOR ULSI APPLICATIONS
Kim, Young-Wug 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e2
This paper discusses the current status of silicide materials like $WAi_2$ and $TiSI_2$ for ULSI applications. Thin film silicides have generated the great interest in the semiconductor integrated circuits for their low resistivities. In this paper, the microstructures of $WSi_2$ films formed on the poly-silicon films by CVD and sputtering were compared. Various problems occurred frequently in Ti-salicide or Ti-polycide process also were reviewed in detail.
김영남(Young-Nam Kim),강성철(Sung-Chul Kang),박진성(Jin-Seong Park),이내인(Nae-In Lee),김일권(Il-Kwon Kim),김영욱(Young-Wug Kim) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.1
산화분위기에서의 Ti/SiO₂ 박막의 산화거동 및 계면반응을 조사했다. SiO₂막위에 100㎚의 티타니움을 스퍼터법으로 형성하여 급속가열로(Rapid Thermal Processor)에서 온도를 달리하여 산화시켰다. 산화거동은 박막의 면저항의 측정, 산화막 두께측정, XPS(X-ray Photoelectron Spectroscopy)에 의한 조성분석으로 평가했다. 산화시 티타니움 면저항은 표면에서 산화로 인해 약 500℃ 이상에서 증가하기 시작해서 800℃에서 포화되었다. 이 때 막두께는 약 700℃ 이상에서 약 2배로 증가한 후 일정한 두께를 나타내었다. 이 결과로부터 산화부산물에 도전성물질이 존재하는 것을 알 수 있었다. TEM과 XPS분석결과 400℃ 이상에서 산화시 Ti 표면에서부터 TiO₂가 형성되고 600℃이상에서는 TiO₂와 SiO₂의 계면에 TiO_x의 형성과 Si의 석출이 확인되었다. 석출되는 Si의 양은 온도에 따라 증가했다. The oxidation behavior of the titanium film and the interface between titanium and underlying SiO₂ were investigated. The titanium film, 100 ㎚ thick, sputtered on the SiO₂ film was oxidized at different temperatures using rapid thermal processor (RTP). The oxidation behavior was evaluated by the contactless resistivity measurement and measuring the thickness of the oxidized film. X-ray photoelectron spectroscopy (XPS) was performed for composition analysis of samples. The sheet resistance of the oxidized Ti film increased with oxidation temperature above 500℃ and saturated at 800℃. The oxidized film thickness also increased with temperature, and become about 2 times of orignal thickness of the Ti film above 700℃. This might indicate that conducting oxide film (TiO_x) was formed during oxidation. According to TEM observation and XPS analysis, the Ti film was oxidized above 400℃ from its surface. When it was oxidized above 600℃, the formation of TiO_x and the precipitation of Si occurred at the interface between TiO₂ and SiO₂. The amount of the precipitated Si increased with temperature.
김기완,박욱동,이우일,김영진 경북대학교 전자기술연구소 1993 電子技術硏究誌 Vol.14 No.1
Hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) on glass substrates have been fabricated with inverted-staggered structure. Amorphous silicon nitride(a-SiN:H) films as the gate dielectric material have been prepared by RF glow discharge decomposition of silane(SiH₄) and ammonia(NH₃). The channel length and channel width of a-Si:H TFTs were 25 ㎛ and 1000 ㎛, respectively. The a-Si:H TFTs operated in n-channel enhancement mode. a-Si:H TFT without n^+-a-Si:H layer showed threshold voltage of 15.3 V, and field effect mobility of 0.03 ㎠/V·sec, and ON/OFF current ratio of about 10³, a-Si:H TFT, which bas n^+-a-Si:H layer of 500 Å at the source and drain region, showed threshold voltage of 12.3 V, field effect mobility of 0.1 ㎠/V·sec, and ON/OFF current ratio of more than 10⁴. It seems that the a-Si:H TFTs have switching application for linear image sensor.
슬관절 강직에 대한 Judet 술식을 이용한 사두고근 유리술
김영우,김성중,경희수,인주철,오창욱 대한슬관절학회 2001 대한슬관절학회지 Vol.13 No.1
Purpose: The purpose of this study is evaluating the result of Judet’s technique of quadricepsplasty for the treatmeot of the stiffness of the knee. Materials and Methods: We analysed 30 patients performed Judet's quadricepsplasty for extension contracture after trauma. The mean age was 36.6 years, mean follow-up period was 48 months. The cause of contracture was 26 fractures around knee, and non-articular fractures were 4 femoral shaft fractures with infection. The mean period from trauma to quadricepsplasty was 37 months. Clinical analysis was evaluated by Judet’s criteria. According to joint involvement, we divided to group A and group B, and group I and group II by period of knee joint immobilization after trauma. Results: According to Judet’s criteria, excellent were 14 cases, good 11 cases, and fair 5 cases. The mean preoperative flexion contracture was 6 degree, and final was 1.5 degree. We gained 4.5 degree of flexion contracture. The mean preoperative further flexion was 45 degree, and final was 10 degree. So we gained 60.5 degree of further flexion. There was no statistically significant difference according to the joint involvement. There was difference according to immobilization period, but no statistically significant difference. Conclusion: Judet’s quadricepsplasty and arthrolysis was effective technique for stiffness of the knee, We analysed the effect of joint involvement and immobilization period until quadricepsplasty, but there was no significant statistically different effect.