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Yewon Cha,Hyeongsik Park,Muhammad Quddamah Khokhar Muha,Youngkuk Kim,Junsin Yi 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
We carried out the thermal annealing to improve the efficiency of SHJ solar cells. To find the optimal temperature, we have investigated for temperature and then ambient gas, respectively. For 150°C and Ar atmosphere, we can be obtained the constant values compared to as deposited sample. However, over 150°C, it was decreased to Hall mobility because of re-crystallinity. Therefore, thermal annealing of ITO and µc-SiO:H layers was contributed to improving FF for SHJ solar cells.
Improving Hall mobility mechanism of sputtered AZO film for thin-film silicon solar cell application
Yewon Cha,Hyeongsik Park,Youngkuk Kim,Junsin Yi 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
In this work, we carried out to reduce the optical absorption and to enhance Hall mobility in TCO film for improving optoelectrical properties. In terms of mean free path, we used for the varying distance between the target and substrate. To confirm improving crystallinity in AZO film, we have used the substrate temperature and then analyzed the XRD, film stress, EDAX, XPS, and PL, respectively.
p-type 실리콘 태양전지의 Degradation의 메커니즘 분석
차예원(Yewon Cha),정성진(Sungjin Jeong),김성헌(Sungheon Kim),김영국(Youngkuk Kim),이준신(Junsin Yi) 대한전기학회 2021 전기학회논문지 Vol.70 No.8
Two main factors that limiting the efficiency of the p-type solar cells are LID(Light Induced Degradation) and LeTID(Light and elevated temperature induced degradation). The major cause of LID is the formation of boron-oxygen defects in boron doped silicon. The LeTID is similar kinds as LID, but also occurs in the dark condition and by the recombination of metals and impurities or the reaction between the hydrogen and arbitrary substance. An overall 7% of LeTID degradation rate occurs over long-term scales. Unexpectedly, these degradations have been recently found to also arises in high purity materials such as float-zone(Fz-Si) and Czochralski-grown(Cz-Si). The proposed method to reduce these two degradations is to use appropriate firing process and annealing conditions.
n-TOPCon 태양전지의 선택적 에미터 형성 기술 분석
정성진(Sungjin Jeong),차예원(Yewon Cha),김성헌(Sungheon Kim),김홍래(Hongrae Kim),박소민(Somin Park),김태용(Taeyong Kim),박진주(Jinjoo Park),주민규(Minkyu Ju),이준신(Junsin Yi) 대한전기학회 2022 전기학회논문지 Vol.71 No.1
The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3~0.4% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process.