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Yatsui, T,Lim, J,Nakamata, T,Kitamura, K,Ohtsu, M,Yi, G-C IOP Pub 2007 Nanotechnology Vol.18 No.6
<P>We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 °C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.</P>
Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method
주병윤,양성채,한병성,Kiyoshi Yatsui,Jung-Hui Lee 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using IBE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.
Weihua Jiang,Nakahiro, K.,Yatsui, K.,Jong-Hyun Kim,Shimizu, N. IEEE 2007 IEEE transactions on dielectrics and electrical in Vol.14 No.4
<P>A compact pulsed high-voltage generator has been developed for applications in pulsed gas discharges. Its operation principle is based on inductive energy storage and it uses a static induction thyristor as the opening switch. It is capable of generating pulsed high voltage of ~15 kV with pulse width of ~200 ns for load resistance of 1 kOmega. This generator can be operated at repetition rate as high as 50 kHz if it is driven directly by 200 V power supply and is cooled by transformer oil. It can also be driven by a 12 V car battery through a chopper circuit, while operating at repetition rate of 2 kHz. In this case, an overall energy efficiency of ~40 % has been obtained.</P>
Observing the localization of light in space and time by ultrafast second-harmonic microscopy
Mascheck, Manfred,Schmidt, Slawa,Silies, Martin,Yatsui, Takashi,Kitamura, Kokoro,Ohtsu, Motoichi,Leipold, David,Runge, Erich,Lienau, Christoph Springer Science and Business Media LLC 2012 Nature photonics Vol.6 No.5
Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method
Cho, Byung-Yoon,Yang, Sung- Chae,Han, Byoung-Sung,Lee, Jung-Hui,Yatsui Kiyoshi The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.