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RISS 인기검색어
- 검색키워드
- 저자 : Y. Kitajima (검색결과 5 건)
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COMPUTER SIMULATION OF MAGNETIC PROPERTIES OF SPRING MAGNETS
N. Kitajima,H. Inoue,Y. Kanai,H. Fukunaga 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
Magnetic properties of model exchange-spring magnets, which are composed of magnetically soft and hard grains, were calculated by means of computer simulation. The dependence of the magnetic properties on the strength of intergrain exchange interaction and the amount of soft grains was studied. The existence of soft grains enhanced the remanence remarkably, and the remanence over 0.8Ms was obtained in the model magnets containing 25% or more soft grains by volume. The calculated coercivity vs. the strength of the exchange interaction curves showed a peak at a critical strength of the exchange interaction, although the remanence increased monotonously with increase in the strength of the exchange interaction. Thus the maximum energy product also reached a peak around the same critical strength. The calculated maximum energy product exceeded 300kJ/㎥ when the magnet is assumed to be composed of Fe₃B and Nd₂Fe₁₄B.
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Imayama, T.,Takeshita, T.,Yi, K.,Cho, D.L.,Kitajima, K.,Tsutsumi, Y.,Kayama, M.,Nishido, H.,Okumura, T.,Yagi, K.,Itaya, T.,Sano, Y. Universitetsforlaget ; Elsevier Science Ltd 2012 Lithos Vol.134 No.-
The timing of partial melting and the pressure-temperature (P-T) paths in the High Himalayan Crystalline Sequence (HHCS) in far-eastern Nepal has been investigated using zircon chronology, rare earth element (REE) compositions, and P-T pseudosection analysis. Zircon from migmatites formed during Himalayan thermal events displays inherited magmatic core overgrown by two generations of metamorphic rims. The new rims are distinguished on the basis of their Tertiary ages, low MREE contents, and low Th/U ratios. The inner zircon rims from Sil+Grt+Bt+Kfs+Pl+Qtz and Ky+Sil+Grt+Bt+Ms+Pl+Qtz migmatites at different structural level of the HHCS display ages of c. 33-28Ma (Early Oligocene) and c. 21-18Ma (Early Miocene): these rims are characterized by flat MREE to HREE patterns and were overgrown by partial melt through muscovite dehydration melting under the stability of garnet, which occurred at P=c. 7-10kbar and T=c. 730-780<SUP>o</SUP>C, and at P=c. 8-14kbar and T=c. 720-770<SUP>o</SUP>C, respectively. The outer zircon rims are relatively enriched in HREE with respect to the inner rims and were overgrown at c. 27-23Ma (Late Oligocene) and at c. 18-16Ma (Early Miocene) during melt crystallization accompanying breakdown of garnet at P=c. 4-7kbar and T=c. 650-725<SUP>o</SUP>C. Early Miocene Ms-Bt leucogranites with two successively overgrown zircon rims at c. 18.3+/-0.3Ma and c. 16.3+/-0.2Ma were intruded into Early Oligocene migmatite hosts. Microstructural observations and the corresponding P-T conditions associated with the two generations of zircon rims indicate that the Early Oligocene and Early Miocene migmatites show relatively isobaric and nearly isothermal P-T paths during exhumation, respectively. The inferences are consistent with higher average cooling rates for the Early Miocene (c. 30-40<SUP>o</SUP>C/My) than the Early Oligocene (c. 15-25<SUP>o</SUP>C/My) migmatites, inferred from peak-T conditions and FT (c. 6Ma for both migmatites) and U-Pb zircon ages. The P-T-t paths of the two migmatites indicate that burial of the Early Miocene migmatites has been coeval with exhumation of the Early Oligocene migmatites, implying the formation of large-scale thrust within the HHCS.
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Analysis of Wide-gap Semiconductors with Superconducting XAFS Apparatus
S. Shiki,N. Zen,M. Koike,M. Ukibe,Y. Kitajima,S. Nagamachi,M. Ohkubo,N. Matsubayashi 한국초전도학회 2012 Progress in superconductivity Vol.14 No.2
Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of 100 μm square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of 1 mm2. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.
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Analysis of Wide-gap Semiconductors with Superconducting XAFS Apparatus
Shiki, S.,Zen, N.,Matsubayashi, N.,Koike, M.,Ukibe, M.,Kitajima, Y.,Nagamachi, S.,Ohkubo, M. The Korean Superconductivity Society 2012 Progress in superconductivity Vol.14 No.2
Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.
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