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Gamma spectrum denoising method based on improved wavelet threshold
Xie Bo,Xiong Zhangqiang,Wang Zhijian,Zhang Lijiao,Zhang Dazhou,Li Fusheng 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.8
Adverse effects in the measured gamma spectrum caused by radioactive statistical fluctuations, gamma ray scattering, and electronic noise can be reduced by energy spectrum denoising. Wavelet threshold denoising can be used to perform multi-scale and multi-resolution analysis on noisy signals with small root mean square errors and high signal-to-noise ratios. However, in traditional wavelet threshold denoising methods, there are signal oscillations in hard threshold denoising and constant deviations in soft threshold denoising. An improved wavelet threshold calculation method and threshold processing function are proposed in this paper. The improved threshold calculation method takes into account the influence of the number of wavelet decomposition layers and reduces the deviation caused by the inaccuracy of the threshold. The improved threshold processing function can be continuously guided, which solves the discontinuity of the traditional hard threshold function, avoids the constant deviation caused by the traditional soft threshold method. The examples show that the proposed method can accurately denoise and preserves the characteristic signals well in the gamma energy spectrum
Dong Xiaohu,Jiang Xuecheng,Gu Yan,Wei Chunlei,Xie Zhijian,Zhang Qi,Qian Weiying,Zhang Xiangyang,Zhu Chun,Lu Naiyan,Chen Guoqing,Yang Guofeng 한국물리학회 2023 Current Applied Physics Vol.50 No.-
This work presents a new approach for lead ion detection (Pb2+) using an aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistor (HEMT) sensor. The AlGaN/GaN HEMT structure of the sensor was realized by functionalizing the gate area with glutathione (GSH). The crystalline and surface qualities of the AlGaN film were measured through X-ray diffraction and atomic force microscopy. The response of the sensor was measured in terms of the source–drain current with varying concentrations of Pb2+ ions at a fixed drain-to-source voltage. The sensitivity of the sensor was 29.3 μA/(mg/L), and it exhibited high selectivity toward Pb2+. The results show that using the GSH-functionalized AlGaN/GaN HEMT sensor is a promising strategy for Pb2+ ion detection.