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A Slot Allocated Blocking Anti-Collision Algorithm for RFID Tag Identification
( Yang Qing ),( Li Jiancheng ),( Wang Hongyi ),( Zeng Xianghua ),( Zheng Liming ) 한국인터넷정보학회 2015 KSII Transactions on Internet and Information Syst Vol.9 No.6
In many Radio Frequency Identification (RFID) applications, the reader recognizes the tags within its scope repeatedly. For these applications, some algorithms such as the adaptive query splitting algorithm (AQS) and the novel semi-blocking AQS (SBA) were proposed. In these algorithms, a staying tag retransmits its ID to the reader to be identified, even though the ID of the tag is stored in the reader`s memory. When the length of tag ID is long, the reader consumes a long time to identify the staying tags. To overcome this deficiency, we propose a slot allocated blocking anti-collision algorithm (SABA). In SABA, the reader assigns a unique slot to each tag in its range by using a slot allocation mechanism. Based on the allocated slot, each staying tag only replies a short data to the reader in the identification process. As a result, the amount of data transmitted by the staying tags is reduced greatly and the identification rate of the reader is improved effectively. The identification rate and the data amount transmitted by tags of SABA are analyzed theoretically and verified by various simulations. The simulation and analysis results show that the performance of SABA is superior to the existing algorithms significantly.
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Zhilei Miao,Wei Wang,Rongchun Yuan,Jun Zhu,Shudong Wu,Haitao Chen,Xianghua Zeng,Qiang Wang 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2018 NANO Vol.13 No.09
We have fabricated BiFeO3 thin film deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The effects of annealing temperature on the thin film structure, resistance switching (RS) properties, conduction mechanisms are investigated. It exhibits improved RS window with high ON/OFF ratio ( ~10 4) for the sample annealed at 650 ℃. XPS characterization indicates that cation ratio of Fe2+/Fe3+ is increased with increasing annealing temperature. Crystal lattice distortion generated by Fe2+ cations, along with oxygen vacancies, commonly contribute to opening the RS window and the increment of conductive filaments. The film's conduction mechanisms under different annealing temperatures are fully discussed. The RS properties of this system can be effectively improved by increasing the annealing temperature, which is crucial prerequisite for future applications of BFO-based thin film device in resistance random access memory.
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