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Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes
Rongchun Yuan,Weiwei Xia,Mengxue Xu,Zhilei Miao,Shudong Wu,Xiuyun Zhang,Junhui He,Qiang Wang 한국물리학회 2020 Current Applied Physics Vol.20 No.3
Based on the bipolar resistive switching (RS) characteristics of SnO2 films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO2/fluorine-doped tin oxide (FTO). The SnO2 microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO2 and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.
Zhilei Miao,Wei Wang,Rongchun Yuan,Jun Zhu,Shudong Wu,Haitao Chen,Xianghua Zeng,Qiang Wang 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2018 NANO Vol.13 No.09
We have fabricated BiFeO3 thin film deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The effects of annealing temperature on the thin film structure, resistance switching (RS) properties, conduction mechanisms are investigated. It exhibits improved RS window with high ON/OFF ratio ( ~10 4) for the sample annealed at 650 ℃. XPS characterization indicates that cation ratio of Fe2+/Fe3+ is increased with increasing annealing temperature. Crystal lattice distortion generated by Fe2+ cations, along with oxygen vacancies, commonly contribute to opening the RS window and the increment of conductive filaments. The film's conduction mechanisms under different annealing temperatures are fully discussed. The RS properties of this system can be effectively improved by increasing the annealing temperature, which is crucial prerequisite for future applications of BFO-based thin film device in resistance random access memory.