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Effects of electronic energy deposition on pre-existing defects in 6H-SiC
Liao, Wenlong,He, Huan,Li, Yang,Liu, Wenbo,Zang, Hang,Wei, Jianan,He, Chaohui Korean Nuclear Society 2021 Nuclear Engineering and Technology Vol.53 No.7
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.
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Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures
He Huan,He Chaohui,Zhang Jiahui,Liao Wenlong,Zang Hang,Li Yonghong,Liu Wenbo 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.7
Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD simulations showed that threshold displacement energy (Ed) was affected by temperatures and at higher temperature, it was larger. The evolutions of defects under various temperatures were similar. However, the higher temperature was found to increase the peak number, peak time, final time and recombination efficiency while decreasing the final number. With regard to clusters, isolated point defects and little clusters were common clusters and the fraction of point defects increased with temperature for vacancy clusters, whereas it did not appear in the interstitial clusters. Finally, at each temperature, the number of Ga interstitial atoms was larger than that of N and besides that, there were other different results of specific types of split interstitial atoms.
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Fang Yao,Mingwei Li,Leijiao Ge,Wenlong Liao,Kody Powell 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.9
With their simple structure, good characteristics, small size, low weight, high starting torque, and high power density, permanent magnet synchronous motors (PMSM) are widely used in industry and national projects. However, accurate PMSM d–q-axis inductance values cannot be obtained after dynamic decoupling of the d–q-axis voltages of a PMSM under vector control. To tackle this challenge, this paper proposes a two-line-same-phase AC standstill measurement (TLSP-ACSM) method. To verify the effectiveness of the proposed method, both the motor synthetic magnetomotive force and theoretical error of inductance measurement based on the TLSP-ACSM method are analyzed, followed by experiments to demonstrate the effectiveness of TLSP-ACSM. By comparing the proposed method with another measurement method, it is demonstrated that the relative error of the d-axis and q-axis inductance measurements is reduced by about 23% and 21%, respectively. When considering magnetic flux leakage, TLSP-ACSM shows better measurement precision and tracking performance.
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