http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : He Chaohui (검색결과 5 건)
- 무료
- 기관 내 무료
- 유료
-
Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures
He Huan,He Chaohui,Zhang Jiahui,Liao Wenlong,Zang Hang,Li Yonghong,Liu Wenbo 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.7
Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD simulations showed that threshold displacement energy (Ed) was affected by temperatures and at higher temperature, it was larger. The evolutions of defects under various temperatures were similar. However, the higher temperature was found to increase the peak number, peak time, final time and recombination efficiency while decreasing the final number. With regard to clusters, isolated point defects and little clusters were common clusters and the fraction of point defects increased with temperature for vacancy clusters, whereas it did not appear in the interstitial clusters. Finally, at each temperature, the number of Ga interstitial atoms was larger than that of N and besides that, there were other different results of specific types of split interstitial atoms.
-
A detector system for searching lost γ-ray source
Khan Waseem,He Chaohui,Cao Yu,Khan Rashid,Yang Weitao 한국원자력학회 2020 Nuclear Engineering and Technology Vol.52 No.7
The aim of this work is to develop a Geiger-Muller (GM) detector system for robot to look for a radioactive source in case of a nuclear emergency or in a high radiation environment. In order to find a radiation source easily, a detector system, including 3 detectors, was designed to search g-ray radiation sources autonomously. First, based on GEANT4 simulation, radiation dose rates in 3 Geiger-Muller (GM) counters were simulated at different source-detector distances, distances between detectors and angles. Various sensitivity analyses were performed experimentally to verify the simulated designed detector system. A mono-energetic 137Cs g-ray source with energy 662 keV and activity of 1.11 GBq was used for the observation. The simulated results were compared with the experimental dose rate values and good agreements were obtained for various cases. Only based on the dose rates in three detectors, the radiation source with a specific source activity and angle was localized in the different location. A method was adopted with the measured dose rates and differences of distances to find the actual location of the lost g-ray source. The corresponding angles of deviation and detection limits were calculated to determine the sensitivity and abilities of our designed detector system. The proposed system can be used to locate radiation sources in low and high radiation environments
-
Effects of electronic energy deposition on pre-existing defects in 6H-SiC
Liao, Wenlong,He, Huan,Li, Yang,Liu, Wenbo,Zang, Hang,Wei, Jianan,He, Chaohui Korean Nuclear Society 2021 Nuclear Engineering and Technology Vol.53 No.7
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.
-
Fault injection and failure analysis on Xilinx 16 nm FinFET Ultrascale+ MPSoC
Weitao Yang,Yonghong Li,Chaohui He 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.6
Energetic particle strikes the device and induces data corruption in the configuration memory (CRAM),causing errors and even malfunctions in a system on chip (SoC). Software-based fault injection is aconvenient way to assess device performance. In this paper, dynamic partial reconfiguration (DPR) isadopted to make fault injection on a Xilinx 16 nm FinFET Ultrascaleþ MPSoC. And the reconfigurationmodule implements the Sobel and Gaussian image filtering, respectively. Fault injections are executed onthe static and reconfiguration modules' bitstreams, respectively. Another contribution is that the failuremodes and effects analysis (FMEA) method is applied to evaluate the system reliability, according to theobtained injection results. This paper proposes a software-based solution to estimate programmabledevice vulnerability.
-
System-on-Chip Single Event Effect hardening design and validation using proton irradiation
Yang Weitao,Li Yang,Guo Gang,He Chaohui,Wu Longsheng 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.3
A multi-layer design is applied to mitigate single event effect (SEE) in a 28 nm System-on-Chip (SoC). It depends on asymmetric multiprocessing (AMP), redundancy and system watchdog. Irradiation tests utilized 70 and 90 MeV proton beams to examine its performance through comparative analysis. Via examining SEEs in on-chip memory (OCM), compared with the trial without applying the multi-layer design, the test results demonstrate that the adopted multi-layer design can effectively mitigate SEEs in the SoC.
ScienceON연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
