The Effect of Agomelatine in Behavioral and Psychological Symptoms of Dementia

Carol Sheei-Meei Wang(Carol Sheei-Meei Wang ),Kuo-Sheng Cheng(Kuo-Sheng Cheng),Chia-Hung Tang(Chia-Hung Tang),Ming-Chyi Pai(Ming-Chyi Pai),Pai-Lien Chen(Pai-Lien Chen),Pei-Fang Chien(Pei-Fang Chien) 대한정신약물학회 2022 CLINICAL PSYCHOPHARMACOLOGY AND NEUROSCIENCE Vol.20 No.4

Objective: Moderate and severe behavioral and psychological symptoms of dementia (BPSD) often need medical treatment to improve symptoms. Agomelatine is a selective melatonergic (MT1/MT2) agonist that has normalizing effects on disturbed circadian rhythms and disrupted sleep−wake cycles. Its activity of 5HT-2C receptor antagonism is associated with lessening depression and anxiety and increasing slow-wave sleep. Based on past clinical records and current findings it suggests that agomelatine can improve BPSD for patients. This retrospective cohort study was designed to compare the BPSD before and after using agomelatine. Methods: Records of dementia cases who had ever received agomelatine treatment for BPSD in a general hospital setting during the past 2.5 years were identified and reviewed. Scores from before and after 3 months of treatment with agomelatine were collected for Neuropsychiatric Inventory (NPI), Brief Psychiatric Rating Scale (BPRS), and Clinical Global Impression (CGI) to compare and analyze the difference of psychological and behavioral symptoms pre- and post-agomelatine used. Results: Records of 144 cases of dementia with BPSD who had ever used agomelatine from January 2015 to June 2017 were collected. All of the 112 cases had BPRS and CGI scores, of which 75 cases had additional NPI scores. Among these 112 cases, the BPRS and CGI scores were significantly improved in all types of dementia. NPI scores indicated that the use of agomelatine alleviated obvious symptoms and decreased overall distress, especially in the depression/poor mood, anxiety, and sleep/night behavior. Conclusion: It is consistent with an effective result of agomelatine in improving BPSD.

A Study on Implementation and Development of Big Data on O2O Model in China Catering Industry

( Chyi Wang ) 한국문화관광학회 2015 문화관광연구 Vol.17 No.1

2013 年被互聯網業界譽爲“大數據元年”,2014 則爲被視中國餐飮“O2O 元年”。近年來中國餐飮行業進入了調整期,餐飮企業的生存狀況急劇惡化,越來越多的餐飮企業開始尋조新的銷수及營銷渠道,線上互聯網和線下餐飮商戶相結合的餐飮行業O2O 模式隨之走熱,但目前大部分O2O 平臺和線下商家都僅僅將其停留在傳播推廣名牌的層面,如何將此模式與大數據結合竝推進餐飮O2O 模式進壹步發展是壹個値得探討的問題。本文從O2O 模式槪入手,探尋了 O2O模式與餐飮行業的融合性問題,竝就目前大數據時代下中國餐飮O2O 模式的應用現狀和甁頸進行分析硏究,指出大數據時代020 的核心是向重用戶體驗發展,通過線上平臺與雲服務器、餐飮管理系統的信息化無縫閉環,處理、轉化、應用大數據,爲線下餐飮企業所服務,竝就大數據時代餐飮O2O 創新模式進行前瞻性預測。 O2O commerce model is a new e-commerce business model which emerging in recent years. China catering industry experienced an adjustment period currently, more and more catering enterprises start looking for new business models for sales and marketing. O2O commerce model has become a comfortable first option of restaurant owners, but most O2O platforms and merchants just focus on branding promotion, and how to connect this model to big data and improve O2O model of catering industry is a topic which is worth discussing. This article starts from the conception of O2O model, explores the fusion of O2O model and catering industry, then analyzes the application and bottleneck on O2O of china catering industry under the age of big data, and points out the core of O2O under big data time is user experience. Finally, innovative O2O model is analyzed from three aspects in the future development prospects.

A Study on Implementation and Development of Big Data on O2O Model in China Catering Industry

Wang Chyi 한국문화관광학회 2015 문화관광연구 Vol.17 No.1

O2O commerce model is a new e-commerce business model which emerging in recent years. China catering industry experienced an adjustment period currently, more and more catering enterprises start looking for new business models for sales and marketing. O2O commerce model has become a comfortable first option of restaurant owners, but most O2O platforms and merchants just focus on branding promotion, and how to connect this model to big data and improve O2O model of catering industry is a topic which is worth discussing. This article starts from the conception of O2O model, explores the fusion of O2O model and catering industry, then analyzes the application and bottleneck on O2O of china catering industry under the age of big data, and points out the core of O2O under big data time is user experience. Finally, innovative O2O model is analyzed from three aspects in the future development prospects. 2013 年被互联网业界誉为"大数据元年", 2014 则为被视中国餐饮"O2O 元年"。近年来中国餐饮行业进入了调整期,餐饮企业的生存状况急剧恶化,越来越多的餐饮企业开始寻找新的销售及营销渠道,线上互联网和线下餐饮商户相结合的餐饮行业 O2O 模式随之走热,但目前大部分 O 2O 平台和线下商家都仅仅将其停留在传播推广名牌的层面,如何将此模式与大数据结合并推进餐饮 O2O 模式进一步发展是一个值得探讨的问题。本文从 O2O 模式概念入手,探寻了 O2O模式与餐饮行业的融合性问题,并就目前大数据时代下中国餐饮 O2O 模式的应用现状和瓶颈进行分析研究,指出大数据时代 020 的核心是向重用户体验发展, 通过线上平台与云服务器、餐饮管理系统的信息化无缝闭环,处理、转化、应用大数据,为线下餐饮企业所服务,并就大数据时代餐饮 O2O 创新模式进行前瞻性预测。

Effects of charge storage dielectric thickness on hybrid gadolinium oxide nanocrystal and charge trapping nonvolatile memory

Jer-Chyi Wang,Chih-Ting Lin,Chi-Feng Chang 한국물리학회 2014 Current Applied Physics Vol.14 No.3

The characteristics of hybrid gadolinium oxide nanocrystal (Gd2O3-NC) and gadolinium oxide charge trapping (Gd2O3-CT) memories were investigated with different Gd2O3 film thickness. By performing the rapid thermal annealing on Gd2O3 films with different thickness, the Gd2O3-NCs with the diameter of 6 e9 nm for charge storage, surrounded by the amorphous Gd2O3 (a-Gd2O3) layer, were formed. The a-Gd2O3 layer was considered to be the charge trapping layer, resulting in the large memory window of Gd2O3-NC/CT memories with thick Gd2O3 film. The charge trapping energy level of the Gd2O3-NCs and a-Gd2O3 layer was extracted to be 0.16 and 0.45 eV respectively by using the temperature-dependent retention measurement. Further, after a 106 program/erase cycling operation, the memory with thin Gd2O3 film can be predicted to sustain a 94% memory window of the first cycling one while the memory with thick Gd2O3 film suffered from a 30% charge loss because of the traps within the a-Gd2O3 layer. The Gd2O3 film thickness of 10 nm was optimized to exhibit superior performances of the Gd2O3-NC/CT memory, which can be applied into the nonvolatile memory.

Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory

Jer-Chyi Wang,Kai-Ping Chang,Chin-Hsiang Liao,Ruey-Dar Chang,Chao-Sung Lai,Li-Chun Chang 한국물리학회 2016 Current Applied Physics Vol.16 No.5

Characteristics of chemically-synthesized (CS) gold nanoparticle (Au-NP) nonvolatile memories (NVMs) with low-damage NH3 plasma treatment on a tunneling oxide (TO) layer have been investigated. Although the dot density of CS Au-NPs is decreased, the programming efficiency of memories with optimized NH3 plasma treatment condition is enhanced due to the formation of a trapezoid-like energy band diagram of the TO layer by nitrogen incorporation. With the extraction of relative permittivity and electron affinity of the TO layer, the capacitance-voltage (C-V) and programming behaviors of CS Au-NP memories with low-damage NH3 plasma treatment on the TO layer are well-fitted by the TCAD (Technology Computer-Aided-Design) simulation. Further, the built-in electric field induced by the trapezoidlike energy band diagram of the TO layer can suppress the leakage current of the TO layer, thereby improving the data retention properties. The low-damage NH3 plasma treatment that results in no plasma damage to the TO layer has been proposed to be the probable candidate for future NVM applications.

Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Jer-Chyi Wang,Chin-Hsiang Liao,Chih-Ting Lin,Ruey-Dar Chang,Li-Chun Chang,Chih-I Wu,Jung-Hung Chang 한국물리학회 2015 Current Applied Physics Vol.15 No.4

Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB_vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB_vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.