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Po-Wei Lee,Tzu-Yun Wang,Yun-Hsuan Chang,Sheng-Yu Lee,Shiou-Lan Chen,Ze-Cheng Wang,Po See Chen,Chun-Hsien Chu,San-Yuan Huang,Nian-Sheng Tzeng,I Hui Lee,Kao Chin Chen,Yen Kuang Yang,Jau-Shyong Hong,Ru-B 대한정신약물학회 2020 CLINICAL PSYCHOPHARMACOLOGY AND NEUROSCIENCE Vol.18 No.1
Objective: Patients with opioid use disorder (OUD) have impaired attention, inhibition control, and memory function. The aldehyde dehydrogenase 2 (ALDH2 ) gene has been associated with OUD and ALDH2 gene polymorphisms may affect aldehyde metabolism and cognitive function in other substance use disorder. Therefore, we aimed to investigate whether ALDH2 genotypes have significant effects on neuropsychological functions in OUD patients undergoing methadone maintenance therapy (MMT). Methods: OUD patients undergoing MMT were investigated and followed-up for 12 weeks. ALDH2 gene polymorphisms were genotyped. Connors’ Continuous Performance Test (CPT) and the Wechsler Memory Scale-Revised (WMS-R) were administered at baseline and after 12 weeks of MMT. Multivariate linear regressions and generalized estimating equations (GEEs) were used to examine the correlation between the ALDH2 genotypes and performance on the CPTs and WMS-R. Results: We enrolled 86 patients at baseline; 61 patients completed the end-of-study assessments. The GEE analysis showed that, after the 12 weeks of MMT, OUD patients with the ALDH2 *1/*2+*2/*2 (ALDH2 inactive) genotypes had significantly higher commission error T-scores (p = 0.03), significantly lower hit reaction time T-scores (p = 0.04), and significantly lower WMS-R visual memory index scores (p = 0.03) than did patients with the ALDH2 1 */*1 (ALDH2 active) genotype. Conclusion: OUD patients with the ALDH2 inactive genotypes performed worse in cognitive domains of attention, impulse control, and memory than did those with the ALDH2 active genotype. We conclude that the ALDH2 gene is important in OUD and is associated with neuropsychological performance after MMT.
Tien-Tung Luong,Binh Tinh Tran,Yen-Teng Ho,Ting-Wei Wei,Yue-Han Wu,Tzu-Chun Yen,Lin-Lung Wei,Jer-Shen Maa,Edward Yi Chang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
The effects of surface pre-treatments and the role of an AlN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AlN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AlN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2HSiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN.