http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Nonvolatile Thin Film Transistor Memory with Ferritin
Kazunori Ichikawa,Mami Fujii,Prakaipetch Punchaipetch,Hiroshi Yano,Tomoaki Hatayama,Takashi Fuyuki,Ichiro Yamashita,Yukiharu Uraoka 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
The low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash memory is a potential candidate as a key component of the system on panel (SOP). We have proposed the “bio-nano-process” for the fabrication of nanodots by using biotechnology. In this study, we have successfully fabricated and developed a LTPS-TFT flash memory with biomineralized inorganic nanodots for the first time. High-density homogeneous nanodots were made to adsorb on a silicon film by using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of a flash memory for a SOP.
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO2 Films
Yukiharu Uraoka,Hiroshi Yano,Makoto Miyashita,Tadashi Serikawa,Takashi Fuyuki,Tomoaki Hatayama,Yuta Sugawara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
We investigated the reliability of low-temperature poly-Si thin film transistor (TFT) by using Si films and gate oxides fabricated by using RF sputtering method. To evaluate the immunity against the hot carrier effect, we imposed DC and dynamic stress on the sputtered TFT. We found that reliability was higher than it was a conventional TFT. The sputtered TFT showed very little degradation. Observation by emission microscope was performed to analyze their strong immunity. In a conventional TFT, emission was observed only at the drain edge. However, in sputtered TFT, emission was observed not only at the drain edge but also at the source edge. We proposed a model explaining the emission in a sputtered TFT. To prove this model, we examined the emission in a SOI TFT. A similar emission mode supports our model. Sputtered TFTs are very promising for next generation.?
Yukiharu Uraoka,Atsushi Tomyo,Eiji Takahashi,Hiroshi Yano,Kazunori Ichikawa,Kiyoshi Ogata,Prakaipetch Punchaipetch,Takashi Fuyuki,Tomoaki Hatayama,Tsukasa Hayashi 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.2I
We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO2 at a low temperature of 430 C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 × 1011 cm.2, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO2 fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.