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Glow-Discharge Sputter Deposition of Si Films and Fabrication of
Tadashi Serikawa 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Precursor amorphous Si films were deposited by glow-discharge sputtering and crystallized by laser irradiation. By using the Si films, polycrystalline Si thin-film transistors (poly-Si TFTs) were fabricated on flexible stainless-steel and glass substrates. The poly-Si TFTs showed excellent electrical characteristics. It has been clarified that sputtered Si films are very promising for realizing high-performance poly-Si TFTs for advanced flat panel displays.
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO2 Films
Yukiharu Uraoka,Hiroshi Yano,Makoto Miyashita,Tadashi Serikawa,Takashi Fuyuki,Tomoaki Hatayama,Yuta Sugawara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
We investigated the reliability of low-temperature poly-Si thin film transistor (TFT) by using Si films and gate oxides fabricated by using RF sputtering method. To evaluate the immunity against the hot carrier effect, we imposed DC and dynamic stress on the sputtered TFT. We found that reliability was higher than it was a conventional TFT. The sputtered TFT showed very little degradation. Observation by emission microscope was performed to analyze their strong immunity. In a conventional TFT, emission was observed only at the drain edge. However, in sputtered TFT, emission was observed not only at the drain edge but also at the source edge. We proposed a model explaining the emission in a sputtered TFT. To prove this model, we examined the emission in a SOI TFT. A similar emission mode supports our model. Sputtered TFTs are very promising for next generation.?