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Some Physical Properties of a Surrounding-Gate MOSFET with Undoped Body
Guang-Xi Hu,Ting-Ao Tang 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.2I
A kind of Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) with a surrounding gate is presented. Some physical properties of the MOSFET are obtained by solving Poisson’s equation analytically. We propose a new criteria for the threshold voltage, and the threshold voltage is obtained in due course. The threshold voltage of a surrounding-gate nMOSFET is influenced by the thickness of the oxide and the radius of the cylinder. It’s also influenced by the work function difference between the gate electrode and intrinsic silicon. A MOSFET with a thinner oxide or a smaller radius will have a higher threshold voltage. We can obtain a desirable threshold voltage by choosing the right material for the gate and the right size for the MOSFET.
Guang-Xi Hu,Ran Liu,Ting-Ao Tang,Ling-Li Wang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
Analytic solutions for the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are obtained by solving Poisson's equation. The analytic expressions for the electric potential and the threshold voltage are obtained by taking into account the short-channel effects. Our analytic results fit with other numerical and simulated results quite well. The analytic expressions will be of great help in ultralarge-scale integrated-circuit (ULSI) design. Analytic solutions for the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are obtained by solving Poisson's equation. The analytic expressions for the electric potential and the threshold voltage are obtained by taking into account the short-channel effects. Our analytic results fit with other numerical and simulated results quite well. The analytic expressions will be of great help in ultralarge-scale integrated-circuit (ULSI) design.
Characterization of proteolysis in muscle tissues of sea cucumber Stichopus japonicus
Chen-Chen Zhao,Yang Yang,Hai-tao Wu,Zhi-Mo Zhu,Yue Tang,Cui-Ping Yu,Na Sun,Qiang Lv,Jia-Run Han,Ao-Ting Li,Jia-Nan Yan,Yue Cha 한국식품과학회 2016 Food Science and Biotechnology Vol.25 No.6
The proteolysis in muscle tissues of sea cucumber Stichopus japonicus (sjMTs) was characterized. The proteins from sjMTs were primarily myosin heavy chains (MHCs), paramyosin (Pm), and actin (Ac) having a molecular mass of approximately 200, 98, and 42 kDa, respectively. Based on SDS-PAGE analysis and quantification of trichloroacetic acid (TCA)-soluble peptides released, degradation of muscle proteins from sjMTs was favorable at pH 5 and 50°C. Proteolysis of MHCs was mostly inhibited by cysteine protease inhibitors, including trans-epoxysuccinyl-L-leucyl-amido (4- guanidino) butane (E-64) and antipain (AP). E-64 and AP completely inhibited the degradation of Pm and Ac, while iodoacetic acid showed a partially inhibitory effect. These results indicated that the proteolysis of sjMTs was mainly attributed to cysteine proteases. Avoidance of setting the tissues at 40–50oC and slightly acidic condition and inhibition of cysteine proteases are helpful for decreasing sea cucumber autolysis.
A Resistive Memory in Semiconducting BiFeO<sub>3</sub> Thin‐Film Capacitors
Jiang, An Quan,Wang, Can,Jin, Kui Juan,Liu, Xiao Bing,Scott, James F.,Hwang, Cheol Seong,Tang, Ting Ao,Lu, Hui Bin,Yang, Guo Zhen WILEY‐VCH Verlag 2011 ADVANCED MATERIALS Vol.23 No.10
<P><B>A ferroelectric‐resistive random access memory consisting of a conductive BiFeO<SUB>3</SUB></B> epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal‐oxide semiconductor processing. </P>