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Optical anisotropy of GaNAs grown on GaAs(0 0 1)substrate
Takahiro Mori,Takashi Hanada,Toshiharu Morimura,Meoung-Whan Cho,Takafumi Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
In this paper GaNxAs1. x surfaces during growth are observed using reectance dierence or reectance anisotropy spectroscopy(RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source.RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2×4)-like features werestill observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1-x surface can be classied into three types of the surface.
Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)
Toshiharu Morimura,Takahiro Mori,Meoung-Whan Cho,Takashi Hanada,Takafumi Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
We investigated surface morphology and optical anisotropy of strained InGaAs lms grown on GaAs(001) substrate usingatomic force microscopy (AFM) and reectance dierence/reectance anisotropy spectroscopy (RDS/RAS). High temperature(HT)-grown samples were found to have a rippled surface structure, however for lms grown using a low temperature (LT) growthtechnique, the surface morphology was signicantly improved, without the ripple structure seen on the HT samples. Furthermore,ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulkelectronic transitions.
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
seunghwan Park,jiho Chang,dongchoel Oh,G. Fujimoto,H. Goto,Hideyuki Suzuki,Takafumi Yao,Takashi Hanada,Tsutomu Minegishi,wookhyun Lee 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The structural deformation of freestanding GaN film has been investigated. The specimen was grown on an Al2O3 substrate by using hydride vapor phase epitaxy (HVPE) and was self-detached during the growth. the atomic force microscopy (AFM) image showed much mechanical damages on the surface, which was presumably generated by the surface polishing process. After chemical etching, the near-band-edge to yellow-band (NBE/YB) luminescence intensity ratio was greatly increased. Also, using high resolution X-ray diraction (HRXRD), we found that the 2-! scan of (0002) reflection asymmetrically broadened at low diraction angles, which indicated that a damaged surface layer existed in the film with residual compressive strain. Moreover, a more detailed X-ray analysis showed that the surface had a concave curvature. We concluded that structural distortion of GaN could induce a serious deformation, which could aect not only the structural but also the optical and the electrical properties of the film.