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Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)
Toshiharu Morimura,Takahiro Mori,Meoung-Whan Cho,Takashi Hanada,Takafumi Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
We investigated surface morphology and optical anisotropy of strained InGaAs lms grown on GaAs(001) substrate usingatomic force microscopy (AFM) and reectance dierence/reectance anisotropy spectroscopy (RDS/RAS). High temperature(HT)-grown samples were found to have a rippled surface structure, however for lms grown using a low temperature (LT) growthtechnique, the surface morphology was signicantly improved, without the ripple structure seen on the HT samples. Furthermore,ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulkelectronic transitions.
Optical anisotropy of GaNAs grown on GaAs(0 0 1)substrate
Takahiro Mori,Takashi Hanada,Toshiharu Morimura,Meoung-Whan Cho,Takafumi Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
In this paper GaNxAs1. x surfaces during growth are observed using reectance dierence or reectance anisotropy spectroscopy(RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source.RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2×4)-like features werestill observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1-x surface can be classied into three types of the surface.