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        Investigation on the electronic state of In-doped ZnO nanocrystals by hard X-ray photoemission spectroscopy

        Mina Jung,Sunyeo Ha,Seungjun Oh,구지은,Keisuke Kobayashi,Tae-In Jeon,Yoshihiro Murakami,Jiho Chang,Takafumi Yao 한국물리학회 2009 Current Applied Physics Vol.9 No.2

        ZnO:In nanocrystals (NCs) with various In contents were synthesized by using a mixed source vapor transportation method. The morphological variation and electronic structure of ZnO:In NCs were studied by bulk sensitive hard X-ray photoemission spectroscopy (HX-PES). ZnO:In NCs are classified into ZnOlike hexagonal and In2O3-like cubic groups, based on the crystal structure, and we have estimated the In content for the phase transformation to be as high as 35 atomic% (atm.%). A filled electronic state in the conduction band was observed from the ZnO-like group, which is regarded as a metallic state, due to an increase of extrinsic carrier density. ZnO:In nanocrystals (NCs) with various In contents were synthesized by using a mixed source vapor transportation method. The morphological variation and electronic structure of ZnO:In NCs were studied by bulk sensitive hard X-ray photoemission spectroscopy (HX-PES). ZnO:In NCs are classified into ZnOlike hexagonal and In2O3-like cubic groups, based on the crystal structure, and we have estimated the In content for the phase transformation to be as high as 35 atomic% (atm.%). A filled electronic state in the conduction band was observed from the ZnO-like group, which is regarded as a metallic state, due to an increase of extrinsic carrier density.

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        Realization of a Low-Threshold-Voltage Field Emitter by Using High-Quality ZnO Nano-Tetrapods

        Mina Jung,Dongchul Oh,고항주,Hyunchul Ko,Jiho Chang,Sunyeo Ha,Takafumi Yao,Wookhyun Lee 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6

        High-performance ZnO tetrapods-type field emitters with low turn-on voltage are realized. Systematic investigations of the formation conditions are performed. Tetrapod-shaped ZnO nanostructures are formed on Si substrates by using a vapor phase transportation method. The effects of two important growth parameters, the growth temperature and the VI/II ratio, are investigated. The growth temperature is controlled in the range from 600 C to 900 C while the VI/II ratio is adjusted by changing the flux of the carrier gas. ZnO tetrapods, formed at 800 C under a carrier gas flux of 0.5 cc/mm2min, show a uniform shape with 100-nm-thick and 1 1.5-μm- long legs. Also, the growth condition confirms a stoichiometric chemical composition (O/Zn 1) without any second phases. The excellent luminescence properties, a strong excitonic UV emission at 3.25 eV without deep-level emission, indicate that tetrapod structures with high crystallinity can be formed under optimized growth conditions.쵇

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