http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Magnetic-field-controlled reconfigurable semiconductor logic
Joo, Sungjung,Kim, Taeyueb,Shin, Sang Hoon,Lim, Ju Young,Hong, Jinki,Song, Jin Dong,Chang, Joonyeon,Lee, Hyun-Woo,Rhie, Kungwon,Han, Suk Hee,Shin, Kyung-Ho,Johnson, Mark Nature Publishing Group, a division of Macmillan P 2013 Nature Vol.494 No.7435
Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result from spin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation and recombination in an InSb p–n bilayer channel. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.
The Crossover Region of the Zeeman and the Rashba Eects in HgCdTe
김태엽,Sungjung Joo,Jinseo Lee,Jong Hee Suh,조신행,김선웅,홍진기,이긍원,신경호 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
From Shubnikov-de Haas oscillations of a two-dimensional electron gas of HgCdTe, the crossover region of the Zeeman and the Rashba effects has been found. This crossover region is attributed to the inherently large Rashba and Zeeman effects in this system. The experimental data have been successfully simulated by calculations based on a non-parabolic two-band k·p theory. Using the experimentally obtained parameters, we calculate the spin-splitting energy and the spin-expectation value and quantitatively compare the Rashba and the Zeeman effects. When the magnetic field is perpendicular to the sample plane, the spin-splitting, caused by the Rashba effect, is reduced by the development of the Landau level, thereby making the Zeeman effect a relatively more dominant mechanism in the crossover region.