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Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry
Seongjae Cho,Stanley S. Cheung,Yung Hun Jung,Sae-Kyoung Kang,Dal Ho Lee,Byung-Gook Park 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4
In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on silicon-on-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the back-end-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current.
Cho, Seongjae,Park, Byung-Gook,Yang, Changjae,Cheung, Stanley,Yoon, Euijoon,Kamins, Theodore I,Yoo, S J Ben,Harris, James S Optical Society of America 2012 Optics express Vol.20 No.14
<P>Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Gamma-valley of germanium. (c) 2012 Optical Society of America</P>