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Kim, Sookjoo,Jeon, Jinho,Kim, Hyoun Woo,Lee, Jae Gab,Lee, Chongmu WILEY-VCH Verlag 2006 Crystal research and technology Vol.41 No.12
<P>Effects of substrate temperature and atmosphere on the electrical and optical properties of Ga-doped ZnO thin films deposited by rf magnetron sputtering were investigated. The electrical resistivity of Ga-doped ZnO (GZO) films decreases as the substrate temperature increases from room temperature to 300°C. A minimum resistivity of 3.3 × 10<SUP>–4</SUP> Ω cm is obtained at 300°C and then the resistivity increases with a further increase in the substrate temperature to 400°C. This change in resistivity with the substrate temperature is related to the crystallinity of the GZO film. The resistivity nearly does not change with the O<SUB>2</SUB>/Ar flow ratio, R for R < 0.25 but increases rapidly with R for R > 0.25. This change in resistivity with R is also related to crystallinity. The crystallinity is enhanced as R increases, but if the oxygen partial pressure is higher than a certain level (R = 0.25 ± 0.10) gallium oxides precipitate at grain boundaries, which decrease both carrier concentration and mobility. Optical transmittance increases as R increases for R < 0.75. This change in transmittance with R is related to changes in oxygen vacancy concentration and surface roughness with R. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
이종무,Hojin Kim,Sookjoo Kim,Wangwoo Lee 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were sequentially deposited on polymer (polyethylene terephthalate: PET) substrates with ZnO buffer layers by using a radio-frequency (r.f.) magnetron sputtering technique, and the effects of the buffer layer thickness on the microstructure and the electrical and the optical properties of the GZO/AZO/ZnO multilayers films were investigated to develop transparent conductors for flexible display applications. The optimum buffer layer thickness with which the lowest resistivity of the GZO/AZO/ZnO films was obtained was determined to be 140nm. The carrier concentration, the carrier mobility and the electrical resistivity of the GZO film with a 150-nm-thick ZnO buffer layer were 6.8 $\times$ 10$^{20}$ cm$^{-3}$, 11.0 cm$^2$/Vs and 8.3 $\times$ 10$^{-4}$ $\Omega$cm, respectively. The transmittance of the GZO/AZO/ZnO films was found to be higher than 85 \% and to be nearly independent of the ZnO buffer layer thickness.
도시지역 토지이용분류를 위한 1:1,000 수치지형도 활용에 관한 연구
민숙주(Min Sookjoo),김계현(Kim Kyehyun) 대한토목학회 2006 대한토목학회논문집 D Vol.26 No.1D
기존의 토지이용 분류방법은 현장조사에 의존하거나 항공사진 판독기법을 사용하므로 상대적으로 시간과 비용의 소요가 큰 편이다. 특히나 도시지역은 토지이용이 복잡하고 집약적이므로 위성영상을 활용해 분류하는데 한계가 있는 실정이다. 이러한 배경에서 본 연구에서는 1:1,000 수치지형도와 IKONOS 위성영상을 혼합 활용하는 토지이용 분류기법을 제기하였다. 본 연구에서 제기한 분류기법의 활용가능성을 파악하기 위하여 서울시 일부지역을 대상으로 실험분석을 수행하였으며, 그 결과 95%의 전체정확도와 14개의 토지이용 항목이 분류되었다. 실험분석의 결과로 미루어 본 연구에서 제기한 분류기법은 도시지역 토지이용분류에 적용 가능한 것으로 판단된다. Existing method of landuse classification using aerial photographs or field survey requires relatively higher amount of time and cost due to necessary manual work. Especially in urban area where the pattern of land use is densely aggregated, a land use classification using satellite image is more complex. In this background, this study proposes a landuse classification method to utilize 1:1,000 digital topographic data and IKONOS satellite image. To prove the possibility of this method, the method was applied to Seoul metropolitan area. The results shows the total accuracy of approximately 95% and 14 landuse classes extracted. Based on the results from the pi lot study, this method is applicable to land use classification in urban area.