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사람폐암세포주 (PC-14)에서 Cyclosporin A에 의한 Adriamycin 내성의 극복
김영환,홍원선,송재관,강윤구,이진오,강태웅,김건열,한용철 대한내과학회 1990 대한내과학회지 Vol.38 No.3
Cyclosporin A and verapamil were tested using MTT assay to evalute the modification effect on the resistance to adriamycin in a human lung cancer cell line(PC-14) and its resistant subline(PC-14/A). PC-14/A was derived by the continuous exposure of PC-14 to incremental concentrations of adriamycin. PC-14/A was 2.5 times more resistant to adriamycin in terms of ICso than PC-14. Cyclosporin A alone, at a concentration of 2.5㎍/㎖, inhibited the growth of PC-14 to 68.3%. 2.5㎍/ ㎖ and 5.0㎍/㎖ of cyclosporin A showed an increase in the cytotoxicity of adriamycin (p<0.01) with 5.0㎍/㎖ being greater than 2.5㎍/㎖(p<0.01). Excluding the direct cytotoxic effect, however, cyclosporin A did not increase in the sensitivity of PC-14 to adriamycin but only showed an additional cytotoxic effect with adriamycin. Verapamil (up to 6.0㎍/㎖) did not inhibit the growth of PC-14. 3.0㎍/㎖ of verapamil did not increase the cytotoxic effect of adriamycin. The combination of cyclosporin A and verapamil with adriamycin enhanced the cytotoxicity of adriamycin, but the result was similar to that of cyclosporin A with adriamycin. 5.0㎍/㎖ of cyclosporin A modified the adriamycin resistance of PC-14/A(SR, 3.2). However, 3.0㎍/㎖ of verapamil did not significantly reverse the adriamycin resistance of PC-14/A. The modified effect of the combination of 5.0㎍/㎖ of cyclosporin A and 3.0㎍/㎖ of verapamil was similar to that of 5.0㎍/㎖ of cyclosporin A alone in PC-14/A. These results demonstrate that cyclosporin A has an additional cytotoxic effect with adriamycin in PC-14 and PC-14/A and has overcome the acquired resistance to adriamycin in PC-14/A. They also suggest that cyclospoin A may have the therapeutic potential in the treatment of human lung cancer.
( Sam-youl Yoon ),( Hyung-jun Han ),( Yun-song Go ),( Tae-jin Song ) 대한간학회 2016 춘·추계 학술대회 (KASL) Vol.2016 No.1
Purpose: Glissonian approach is useful method in open hepatic resection. Glisonian approach have benefit of less blood loss, operation time saving and better oncologic outcomes. Totally intra-corporeal laparoscopic Rt. Posterior Sectionectomy is difficult to challenge and dangerous to surgeons on his initial stage for laparoscopic liver resection. Laparoscopic Glissonian approach with hanging-over maneuver is could be achived by isolation of Rt. Posterior Glissonian pedicle. Method: The Glissonian approach with hanging-over method is well known method for open liver resection. And, it could be applied for laparoscopic liver resection for experienced HBP surgeons. The detailed knowledge of the segmental anatomy of the liver has led to a rapid evolution in resectional surgery based on the intrahepatic distribution of the portal triad.. This Glissonian sheath encloses the portal trinity. We describe the technique for laparoascopic approaching the Glissonian sheath and hence the hepatic pedicle structures and their branches by the intrahepatic posterior approch that allows early delineation of the liver segment without the need for ancillary techniques. Pedicle to Rt. Lobe and Lt. Lobe could be separated first. Then, pedicle to Rt. Anterior and Posterior segement could be isolated as whole Glissonian pedicle by laparoscopic approach. Result: Especially rt. Posterior segment have large surface for surgical resection and difficulty for mobilization of Rt. Lobe. After passing the silicon tube through RPS Glissonian pedicle and with/without Rt. Hepatic vein, hanging over for Rt. Posterior parenchyma could be achived. Conclusion: Moreover, laparoacopic Glissonian approach with modified hanging over maneuver could help the laparoscopic major liver section. Future prospectively, the usefulness of this technique for oncologic aspect and surgical result are also discussed.
Yoon-Ho Song,Jin Ho Lee,Seung-Youl Kang,Sung-Yool Choi,Kyung-Soo Suh,Mun-Yang Park,Kyoung-Ik Cho 한국진공학회(ASCT) 1999 Journal of Korean Vacuum Science & Technology Vol.3 No.1
We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25×25 pixels in which polycrystalline silicon field emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolithically integrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-state currents even though at high drain voltages. The integrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25 V. With the prototype AMFED we have displayed character patterns by low-voltage peripheral circuits of 15 V in a high vacuum chamber.
Emodin Regulates Glucose Utilization by Activating AMP-activated Protein Kinase
Song, Parkyong,Kim, Jong Hyun,Ghim, Jaewang,Yoon, Jong Hyuk,Lee, Areum,Kwon, Yonghoon,Hyun, Hyunjung,Moon, Hyo-Youl,Choi, Hueng-Sik,Berggren, Per-Olof,Suh, Pann-Ghill,Ryu, Sung Ho American Society for Biochemistry and Molecular Bi 2013 The Journal of biological chemistry Vol.288 No.8
Song, Yoon-Ho,Kang, Seung-Youl,Cho, Kyoung-Ik,Yoo, Hyung-Joun Electronics and Telecommunications Research Instit 1997 ETRI Journal Vol.19 No.1
The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.
A Function-Based Knowledge Base for Technology Intelligence
Yoon, Janghyeok,Ko, Namuk,Kim, Jonghwa,Lee, Jae-Min,Coh, Byoung-Youl,Song, Inseok Korean Institute of Industrial Engineers 2015 Industrial Engineeering & Management Systems Vol.14 No.1
The development of a practical technology intelligence system requires a knowledge base that structures the core information and its relationship distilled from large volumes of technical data. Previous studies have mainly focused on the methodological approaches for technology opportunities, while little attention has been paid to constructing a practical knowledge base. Therefore, this study proposes a procedure to construct a function-based knowledge base for technology intelligence. We define the product-function-technology relationship and subsequently present the detailed steps for the knowledge base construction. The knowledge base, which is constructed analyzing 1110582 patents between 2009 and 2013 from the United States Patent and Trademark Office database, contains the functional knowledge of products and technologies and the relationship between products and technologies. This study is the first attempt to develop a large-scale knowledge base using the concept of function and has the ability to serve as a basis not only for furthering technology opportunity analysis methods but also for developing practical technology intelligence systems.
Song, Yoon-Ho,Lee, Jin-Ho,Kang, Seung-Youl,Park, Sng-Yool,Suh, Kyung-Soo,Park, Mun-Yang,Cho, Kyoung-Ik The Korean Vacuum Society 1999 Journal of Korean Vacuum Science & Technology Vol.3 No.1
We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25$\times$25 pixels in which polycrystalline silicon fie이 emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolityically intergrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-stage currents even though at high drain voltages. The intergrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25V. With the prototype AMFED we have displayed character patterns by low-boltage pertipheral circuits of 15 V in a high vacuum chamber.
A Function-Based Knowledge Base for Technology Intelligence
Janghyeok Yoon,Namuk Ko,Jonghwa Kim,Jae-Min Lee,Byoung-Youl Coh,Inseok Song 대한산업공학회 2015 Industrial Engineeering & Management Systems Vol.14 No.1
The development of a practical technology intelligence system requires a knowledge base that structures the core information and its relationship distilled from large volumes of technical data. Previous studies have mainly focused on the methodological approaches for technology opportunities, while little attention has been paid to constructing a practical knowledge base. Therefore, this study proposes a procedure to construct a function-based knowledge base for technology intelligence. We define the product-function-technology relationship and subsequently present the detailed steps for the knowledge base construction. The knowledge base, which is constructed analyzing 1110582 patents between 2009 and 2013 from the United States Patent and Trademark Office database, contains the functional knowledge of products and technologies and the relationship between products and technologies. This study is the first attempt to develop a large-scale knowledge base using the concept of function and has the ability to serve as a basis not only for furthering technology opportunity analysis methods but also for developing practical technology intelligence systems.