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Rong-Ming Ko,Yan-Ru Lin,Ching-Yi Chen,Pai-Feng Tseng,Shui-Jinn Wang 한국물리학회 2018 Current Applied Physics Vol.18 No.1
The hydrothermal epitaxy of ZnO films on a patterned GaN layer with a honeycomb etching hole array is demonstrated. Through m-planes of the GaN layer exposed on the vertical walls of the etching holes, highly crystalline ZnO films via multiple lateral growth stages can be realized. It is found that higher concentrations of zinc nitrate hexahydrate (ZNH) and hexamethylenetetramine (HMT) in hydrothermal solution yield a larger number of ZnO molecules to speed up ZnO growth during the initial stage of hydrothermal growth, also create secondary crystals and initialize further lateral growth stages to bridge neighboring ZnO prisms after smooth surfaces formed on the m-plane of a ZnO prism. A successive lateral growth mechanism that strongly depends on ZNH and HMT concentrations in the hydrothermal solution is proposed and discussed.
Statistic Analysis on Nonuniformity of Electrical Parameters of ZnO Varistors
Jin-Liang He,Shui-Ming Chen,Se-Won Han,Han-Goo Cho,Hyung-Boo Kang 한국정보과학회 1998 Journal of Electrical Engineering and Information Vol.3 No.5
Analyzing the nonuniformity of electrical parameters of ZnO varistors is useful to select and coordinate the ZnO varistors in parallel operation to increase the protection capability of ZnO varistors. The nonuniformity of 1[mA] DC voltage and impulse residual voltage in ZnO varistors for commercial low- and high-voltage were estimated by a statistic analysis in this paper. The relative standard deviations of 1[mA] DC voltages ZnO varistors for low-voltage and rugh-voltage were 1.98[%] and 4.10[%], respectively. The respective relative standard deviations of impulse residual voltages were 2.24[%] and 3.14[%], respectively. For the distribution of 1[mA] DC voltage and impulse residual voltage, results in ZnO varistors for low- and high-voltage agreed well with the Minimum Gobble Distribution according to the Kolmogorov-Smirnov test. A close relation between the impulse residual voltage and 1[mA] DC voltage was verified by both the t-test and another test method, and the impulse residual voltage could be estimated by a voltage ratio and 1[mA] DC voltage. The current overload of ZnO varistor with reduced residual voltage was not serious at the tested deviation range by simulation analysis, therefore, there was no problem for these varistors operating in parallel.