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RISS 인기검색어
- 검색키워드
- 저자 : Sheng‑Po Tseng (검색결과 4 건)
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Fu‑Sheng Pai,Po‑Sheng Tseng 대한전기학회 2020 Journal of Electrical Engineering & Technology Vol.15 No.3
Regardless of whether level 1, level 2, or dc fast charging, several methods are under development or available as an aftermarket option for Plug-in electric vehicles (EVs). While confning the charging behavior of EVs to low-load periods is diffcult, it leads to signifcant and uncertain load peaks and valleys in the utility power network. Therefore, this paper proposes a new method for an electric vehicle charger. The proposed charging method involves power supervisory characteristics on the basis of the paradigm of a constant-current and a constant-voltage (CC–CV) charger so that the external commands from the demand-side resource aggregator in the smart grid can be executed. In the method, frst, a feedback loop is included in the controller to formulate the relationship between battery voltage and charging power as a quadratic concave downward polynomial. The controlled output power at the beginning of constant voltage charging is then set to the maximum value of the quadratic polynomial because the charging power requirement near this point is closed to the highest. Hence, if the charging power is lower than the allowable maximum power, the proposed charger is determined to have followed the traditional CC–CV charging steps. On contrast, the proposed circuit launches the power control loop when the actual charging power is beyond the maximum power limitation of aggregator. The proposed charger can keep the power consumption inside an allowable range of aggregator. That is the power consumption at the EV charging sites becomes directly programmable by their aggregators. The proposed method is examined by conducting an interactive test of a remote energy management system and the proposed controller. The results revealed that the proposed method provide an easy method to dynamically control consumption pattern of the EV charging for demand-side power management.
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N. Jeyaprakash,Che‑Hua Yang,Sheng‑Po Tseng 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.6
Stainless steel material has been widely used in aeronautical, chemical and nuclear industries due to good corrosion resistance. However, the material has less hardness and wear resistance. In this study, two various depositions namely Colmonoy-6and Stellite-6 have produced on 304 Stainless steel. Besides, the coating was examined to reveal their metallurgical, mechanicaland tribological properties. In addition, wear mechanism, wear debris and roughness averages were studied. The outcomesindicate that both coatings show with dendrite structure due to rapid cooling rates. Hardness of the clad surface has improvedthan substrate material. The results of friction coefficient of specimen with Colmonoy-6 is lower than that of specimensStellite-6 and substrate. Also, wear resistance of Colmonoy-6 has increased 49 times than substrate sample, which revealsthat Colmonoy-6 laser cladding plays role on wear resistance. Adhesive and abrasive are the major wear mechanisms in thepresent study.
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Probing Insulator-quantum Hall Transitions by Current Heating
Kuang Yao Chen,N. Aoki,Y. Ochiai,K. A. Cheng,Li-Hung Lin,C. F. Huang,Yu-Ru Li,Yen Shung Tseng,Chun-Kai Yang,Po-Tsun Lin,Jau-Yang Wu,Sheng-Di Lin,C.-T. Liang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al- GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te~Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor. We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al- GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te~Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor.
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Enhanced Phase Relaxation in a Hybrid Ferromagnet/Semiconductor System
Kuang Yao Chen,Chun-Kai Yang,N. Aoki,Y. Ochiai,Y. Ujiie,K. A. Cheng,Li-Hung Lin,C. F. Huang,Yu-Ru Li,Yen Shung Tseng,Po-Tsun Lin,Jau-Yang Wu,Sheng-Di Lin,C.-T. Liang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems. Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.
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