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Han, Jung-Hoon,Oh, Juhyun,Yoon, Sangmoon,Kim, Yanghoo,Han, Heung Nam,Kim, Miyoung Korean Society of Microscopy 2016 Applied microscopy Vol.46 No.4
Twinning-induced plasticity (TWIP) steels with the austenite structure containing high manganese exhibit both good strength and excellent formability. Such properties originate from crystallographic slip and mechanical twins produced when the austenite structure is under mechanical stress. There are 12 twin systems, referred to as twin variants, when slip is induced. These twin systems include twin planes and twin directions and play an important role in determining strength and ductility of the material by strongly influencing texture formation of the austenite structure. In the present study, twins produced in a high-Mn TWIP steel as a result of uniaxial tension were observed using a transmission electron microscope; a comparative analysis was performed through interaction energy calculations. Electron diffraction was used to determine the twin system with respect to the uniaxial tension direction in each grain. Both the Schmid factors and interacting energies required for the generation of twins were calculated and subsequently compared with experimental results. This approach demonstrated the possibility of predicting the deformation behavior of the material.
Han, Sangmoon,Choi, Ilgyu,Lee, Kwanjae,Lee, Cheul-Ro,Lee, Seoung-Ki,Hwang, Jeongwoo,Chung, Dong Chul,Kim, Jin Soo Springer-Verlag 2018 Journal of electronic materials Vol.47 No.2
<P>We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 k Omega and 0.19 Omega cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 k Omega and 0.39 Omega cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.</P>
Structural and Optical Properties of GaN Nanowires Formed on Si(111)
Sangmoon Han,Ilgyu Choi,Jihoon Song,Cheul-Ro Lee,Il-Wook Cho,Mee-Yi Ryu,Jin Soo Kim 한국진공학회(ASCT) 2018 Applied Science and Convergence Technology Vol.27 No.5
We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasmaassisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.
Han, Sangmoon,Lee, Seoung-Ki,Choi, Ilgyu,Song, Jihoon,Lee, Cheul-Ro,Kim, Kangmin,Ryu, Mee-Yi,Jeong, Kwang-Un,Kim, Jin Soo American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.44
<P>In this study, we report highly efficient and flexible photosensors with GaN nanowires (NWs) horizontally embedded in a graphene sandwich structure fabricated on polyethylene terephthalate. GaN NWs and the graphene sandwich structure are used as light-absorbing media and the channel for carrier movement, respectively. To form uniform high-quality crystalline GaN NWs on Si(111) substrates, the initial nucleation behavior of the NWs was manipulated by applying the new growth technique of Ga predeposition. High-resolution transmission electron microscopic images obtained along the vertical direction of GaN NWs showed that stacking faults, typically observed in Si-based (In,Ga)As NWs, were rare. Consequently, narrow and strong optical emission was observed from the GaN NWs at wavelengths of 365.12 nm at 300 K. The photocurrent and photoresponsivity of the flexible photosensor with 802 nm long GaN NWs horizontally embedded in the graphene sandwich channel were measured as 9.17 mA and 91.70 A/W, respectively, at the light intensity of 100 mW/cm<SUP>2</SUP>, which are much higher than those previously reported. The high optical-to-electrical conversion characteristics of our flexible photosensors are attributed to the increase in the effective interface between the light-absorbing media and the carrier channel by the horizontal distribution of the GaN NWs within the graphene sandwich structure. After 200 cyclic-bending test of the GaN NW photosensor at the strain of 3%, the photoresponsivity under strain was measured as 89.04 A/W at 100 mW/cm<SUP>2</SUP>, corresponding to 97.1% of the photoresponsivity obtained before bending. The photosensor proposed in this study is relatively simple in device design and fabrication, and it requires no sophisticated nanostructural design to minimize the resistance to metal contacts.</P> [FIG OMISSION]</BR>
Structural and Optical Properties of GaN Nanowires Formed on Si(111)
Han, Sangmoon,Choi, Ilgyu,Song, Jihoon,Lee, Cheul-Ro,Cho, Il-Wook,Ryu, Mee-Yi,Kim, Jin Soo The Korean Vacuum Society 2018 Applied Science and Convergence Technology Vol.27 No.5
We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.
The Role of TNF Superfamily Member 13 in the Progression of IgA Nephropathy
Han, Seung Seok,Yang, Seung Hee,Choi, Murim,Kim, Hang-Rae,Kim, Kwangsoo,Lee, Sangmoon,Moon, Kyung Chul,Kim, Joo Young,Lee, Hajeong,Lee, Jung Pyo,Jung, Ji Yong,Kim, Sejoong,Joo, Kwon Wook,Lim, Chun Soo American Society of Nephrology 2016 Journal of the American Society of Nephrology Vol.27 No.11
이상문(Sangmoon Lee),한영근(Young Keun Han),권지원(Ji-Won Kwon) 대한검안학회 2010 Annals of optometry and contact lens Vol.9 No.1
목적: 각막문신술은 각막혼탁으로 인한 미용적 장애개선을 위해, 효과적으로 적용되고 있는 수술법이다. 본 증례에서는 선천성 결막화각막으로 인하여 각막이 제대로 생성되지 않았던 안구에서 각막모양으로 문신술을 시행하여 미용적 호전을 얻은 1예를 경험하였기에 보고하고자 한다. 방법: 후향적 의무기록 조사. 결과: 48세 남자 환자가 출생 시부터 있었던 좌안의 각막 혼탁을 주소로 내원하였다. 나안시력은 우안 1.5, 좌안 광각무였으며, 좌안 각막의 하부 삼분의 일은 경도의 혼탁 및 표면의 칼슘 침착이 동반되어 있었고 상부 삼분의 이가 각막조직이 아닌 변성된 조직으로써 결막으로 덮여 있었다. 이에 하부의 각막 및 상부의 결막화각막에 대하여 26 게이지 바늘을 사용하여 검정색 생체염료로 문신술을 시행하였다. 좌안 눈동자의 모양과 크기는 우안 눈동자의 크기를 근거로 결정하여 염료의 주사 전에 경계를 만들었다. 2년 후 각막 및 결막화 각막의 착색 상태는 양호하였고 환자는 겉으로 보기에 좌안각막 혼탁이 보이지 않을 정도로 호전되어 미용적 결과에 매우 만족하였다. 결론: 문신술은 미용적 목적을 위하여 각막에 대하여 뿐만 아니라 결막화 각막에도 효과적으로 적용할 수 있는 수술법으로 생각된다. Purpose: Corneal tattooing is an effective surgical method for cosmesis in eyes with corneal scar. We report a case of successful congenitally conjunctivalized corneal tattooing. Methods: Retrospective review of medical record. Results: 48-years-old man was presented at ophthalmology clinic with a chief complaint of congenitally opaque cornea in the left eye. He was wearing iris contact lens for cosmesis, but he felt it uncomfortable because of frequent inflammation and foreign body sensation. His visual acuity was 30/20 in the right eye and no light perception in the left eye. Lower one third of cornea was relatively clear but overlaid with a little amount of calcium plaque. Upper two third of cornea was degenerative and conjunctivalized. Tattooing at lower corneal stroma and upper conjunctivalized cornea was performed with black tissue-marking and 26-gauge needle. The shape and size of cornea were determined according to those of his fellow eye and the margin was demarcated before injection of the dye. After two years, tattooing of corneal stroma and conjunctivalized cornea is maintained well. Grossly his cornea was dark and symmetric and the patient was very satisfied with cosmetic result. Conclusions: Tattooing can be a good surgical option for congenitally conjunctivalized cornea as well as corneal stromal opacity for cosmesis.
Sampled-Data MPC for Leader-Following of Multi-Mobile Robot System
Seungyong Han(한승용),Sangmoon Lee(이상문) 대한전기학회 2018 전기학회논문지 Vol.67 No.2
In this paper, we propose a sampled-data model predictive tracking control deign for leader-following control of multi-mobile robot system. The error dynamics of leader-following robots is modeled as a Linear Parameter Varying (LPV) model. Also, the Lyapunov function is presented to guarantee stability of the networked control system. Based on the stabilization condition using a quadratic Lyapunov function approach, model predictive sampled-data controller is designed. Finally, the leader-following control of multi mobile robots is simulated to show effectiveness of the proposed method.