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Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface
Choi, Ilgyu,Lee, Hyunjoong,Lee, Cheul-Ro,Jeong, Kwang-Un,Kim, Jin Soo IOP 2018 Nanotechnology Vol.29 No.31
<P>This paper reports the formation of GaN and InN quantum dots (QDs) with symmetric spherical shapes, grown on SiN/Si(111). Spherical QDs are grown by modulating initial growth behavior via gallium and indium droplets functioning as nucleation sites for QDs. Field-emission scanning electron microscope (FE-SEM) images show that GaN and InN QDs are formed on curved SiN/Si(111) instead of on a flat surface similar to balls on a latex mattress. This is considerably different from the structural properties of In(Ga)As QDs grown on GaAs or InP. In addition, considering the shape of the other III–V semiconductor QDs, the QDs in this study are very close to the ideal shape of zero-dimensional nanostructures. Transmission-electron microscope images show the formation of symmetric GaN and InN QDs with a round shape, agreeing well with the FE-SEM results. Compared to other III–V semiconductor QDs, the unique structural properties of Si-based GaN and InN QDs are strongly related to the modulation in the initial nucleation characteristics due to the presence of droplets, the degree of lattice mismatch between GaN or InN and SiN/Si(111), and the melt-back etching phenomenon.</P>
Choi, Ilgyu,Lee, Kwanjae,Lee, Cheul-Ro,Lee, Joo Song,Kim, Soo Min,Jeong, Kwang-Un,Kim, Jin Soo American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.20
<P>Group III-nitride light-emitting diodes (LEDs) fabricated on sapphire substrates typically suffer from insufficient heat dissipation, largely due to the low thermal conductivities (TCs) of their epitaxial layers and substrates. In the current work, we significantly improved the heat-dissipation characteristics of an InGaN/GaN quantum-well (QW) green LED by using hexagonal boron nitride (hBN) as a heat-transfer medium. Multiple-layer hBN with an average thickness of 11 nm was attached to the back of an InGaN/GaN-QW LED (hBN-LED). As a reference, an LED without the hBN (Ref-LED) was also prepared. After injecting current, heat-transfer characteristics inside each LED were analyzed by measuring temperature distribution throughout the LED as a function of time. For both LED chips, the maximum temperature was measured on the edge n-type electrode brightly shining fabricated on an n-type GaN cladding layer and the minimum temperature was measured at the relatively dark-contrast top surface between the p-type electrodes. The hBN-LED took 6 s to reach its maximum temperature (136.1 °C), whereas the Ref-LED took considerably longer, specifically 11 s. After being switched off, the hBN-LED took 35 s to cool down to 37.5 °C and the Ref-LED took much longer, specifically 265 s. These results confirmed the considerable contribution of the attached hBN to the transfer and dissipation of heat in the LED. The spatial heat-transfer and distribution characteristics along the vertical direction of each LED were theoretically analyzed by carrying out simulations based on the TCs, thicknesses, and thermal resistances of the materials used in the chips. The results of these simulations agreed well with the experimental results.</P> [FIG OMISSION]</BR>
하향링크 다중사용자 다중안테나 시스템을 지원하는 반복 가중치 최소평균자승오류 빔형성 기법
최일규(Ilgyu Choi),황영수(Youngsoo Hwang),이충용(Chungyong Lee) 대한전자공학회 2013 전자공학회논문지 Vol.50 No.3
기존의 최소평균자승오류 빔형성 기법은 간섭제거나 정합필터 빔형성 기법보다 우수한 성능을 보여주지만, 전체 전송률의 증가를 목적으로 하지는 않는다. 본 논문은 전체 전송률을 가중된 평균자승오류로 표현하여 증가시키는 기법을 제안하였다. 제안 기법은 기존의 최소평균자승오류 기법에서 출발하여 반복적으로 가중치와 빔을 갱신함으로써 전체 전송률을 증가시킨다. 모의실험 결과를 통해 제안 기법이 기존 기법보다 전체 전송률 측면에서 뛰어나며, 기존 기법과 달리 사용자의 수가 높아질수록 전체 전송률이 증가하는 것을 확인하였다. Conventional MMSE beamforming scheme shows better performance than ZF or MF beamforming, but it does not aim increase of sum rate. This paper proposes sum rate maximizing scheme by representing sum rate as a function of weighted MSE. Proposed scheme increases sum rate iteratively by updating weights and beam whose initial form is conventional MMSE beam. Simulation result shows sum rate of proposed scheme is higher than those of conventional schemes and increases as the number of users increases.
Han, Sangmoon,Choi, Ilgyu,Lee, Kwanjae,Lee, Cheul-Ro,Lee, Seoung-Ki,Hwang, Jeongwoo,Chung, Dong Chul,Kim, Jin Soo Springer-Verlag 2018 Journal of electronic materials Vol.47 No.2
<P>We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 k Omega and 0.19 Omega cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 k Omega and 0.39 Omega cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.</P>
Structural and Optical Properties of GaN Nanowires Formed on Si(111)
Han, Sangmoon,Choi, Ilgyu,Song, Jihoon,Lee, Cheul-Ro,Cho, Il-Wook,Ryu, Mee-Yi,Kim, Jin Soo The Korean Vacuum Society 2018 Applied Science and Convergence Technology Vol.27 No.5
We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.
Structural and Optical Properties of GaN Nanowires Formed on Si(111)
Sangmoon Han,Ilgyu Choi,Jihoon Song,Cheul-Ro Lee,Il-Wook Cho,Mee-Yi Ryu,Jin Soo Kim 한국진공학회(ASCT) 2018 Applied Science and Convergence Technology Vol.27 No.5
We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasmaassisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.
CoMP 기법이 적용된 다중 사용자 MIMO-OFDMA 시스템을 위한 자원 할당 기법
최동욱(Dongwook Choi),이재홍(Jae Hong Lee),이문식(Moon-Sik Lee),김일규(Ilgyu Kim) 한국방송·미디어공학회 2010 한국방송공학회 학술발표대회 논문집 Vol.2010 No.11
본 논문은 CoMP 기법이 적용된 다중 사용자 MIMO-OFDMA 시스템을 위한 자원할당 알고리즘을 제안한다. 제안된 알고리즘에서는 eNode B가 RRE와 UE간의 채널 정보를 이용하여 전체 송신 전력 제한을 가지면서 전체 데이터 레이트가 최대가 되도록 자원을 할당한다. 자원할당 알고리즘을 통해 얻어진 결과를 이용하여 부반송파에 다수의 UE들이 할당된다. 할당된 UE들은 각각 MIMO 채널을 통해 다수의 공간경로를 갖고 각 공간경로에서는 할당된 전력에 따라 QPSK, 16QAM, 64QAM 중 하나를 선택하여 전송한다.
하향링크 다중사용자 다중안테나 시스템을 지원하는 반복 가중치 최소평균자승오류 빔형성 기법
최일규,황영수,이충용,Choi, Ilgyu,Hwang, Youngsoo,Lee, Chungyong 대한전자공학회 2013 전자공학회논문지 Vol.49 No.11
기존의 최소평균자승오류 빔형성 기법은 간섭제거나 정합필터 빔형성 기법보다 우수한 성능을 보여주지만, 전체 전송률의 증가를 목적으로 하지는 않는다. 본 논문은 전체 전송률을 가중된 평균자승오류로 표현하여 증가시키는 기법을 제안하였다. 제안 기법은 기존의 최소평균자승오류 기법에서 출발하여 반복적으로 가중치와 빔을 갱신함으로써 전체 전송률을 증가시킨다. 모의실험 결과를 통해 제안 기법이 기존 기법보다 전체 전송률 측면에서 뛰어나며, 기존 기법과 달리 사용자의 수가 높아질수록 전체 전송률이 증가하는 것을 확인하였다. Conventional MMSE beamforming scheme shows better performance than ZF or MF beamforming, but it does not aim increase of sum rate. This paper proposes sum rate maximizing scheme by representing sum rate as a function of weighted MSE. Proposed scheme increases sum rate iteratively by updating weights and beam whose initial form is conventional MMSE beam. Simulation result shows sum rate of proposed scheme is higher than those of conventional schemes and increases as the number of users increases.