http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Sang-SikKang (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Sang-SikKang,Jae-HyungKim,Hyung-Won,Lee,Chi-WoongMun,Sang-HeeNam 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.2
The Cd1-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd1-xZnxTe film were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd0.7Zn0.3Te thin film were measured to 0.37 nA/cm2 and 260 pC/cm2 at an applied voltage of 2.5 V/㎛, respectively. Experimental results showed that the increase of Zn doping rates in Cd1-xZnxTe detectors reduced the leakage current and improved the signal to noise ratio significantly.
-
Experiment of Drifting Mobilities of Holes and Electrons in Stabilized a-Se Film
Sang-SikKang,박지군,Jang-YongChoi,Jae-HyungKim,Snag-Hee 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.6
The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of 400 mm. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73 ms and 229.17 ms, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4 V/mm. Above 4 V/mm, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 cm2V-1s-1 and 0.00174 cm2V-1s-1 at 10 V/mm.
-
Zinc Sulfide selenium X-ray Detector for Digital Reaiography
ji-KoonPark,Sang-SikKang,Jae-HyungKim,Chi-WoongMun,Sang-HeeNam 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.4
The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/cm2/mR and 295 pC/cm2/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.
-
Study on Electrical Properties of X-ray Sensor Based on ScI:Na-Selenium Film
Ji-KoonPark,Sang-SikKang,Dong-GilLee,Jang-YongChoi,Jae-HyungKim,Sang-HeeNam 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.3
In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65㎛-CsI:Na/30㎛-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ㎛ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below 400 pA/cm2 at 10 V/㎛. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
