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RISS 인기검색어
- 검색키워드
- 저자 : Jang-YongChoi (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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Experiment of Drifting Mobilities of Holes and Electrons in Stabilized a-Se Film
Sang-SikKang,박지군,Jang-YongChoi,Jae-HyungKim,Snag-Hee 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.6
The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of 400 mm. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73 ms and 229.17 ms, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4 V/mm. Above 4 V/mm, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 cm2V-1s-1 and 0.00174 cm2V-1s-1 at 10 V/mm.
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Study on Electrical Properties of X-ray Sensor Based on ScI:Na-Selenium Film
Ji-KoonPark,Sang-SikKang,Dong-GilLee,Jang-YongChoi,Jae-HyungKim,Sang-HeeNam 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.3
In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65㎛-CsI:Na/30㎛-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ㎛ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below 400 pA/cm2 at 10 V/㎛. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.
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