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Study on Electrical Properties of X-ray Sensor Based on ScI:Na-Selenium Film
Ji-KoonPark,Sang-SikKang,Dong-GilLee,Jang-YongChoi,Jae-HyungKim,Sang-HeeNam 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.3
In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65㎛-CsI:Na/30㎛-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ㎛ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below 400 pA/cm2 at 10 V/㎛. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.
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