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- 저자 : Sang Kyoo Lim (검색결과 193 건)
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임성규,이휘철 단국대학교 신소재기술연구소 2001 신소재 Vol.10 No.-
요즘 사용되고 있는 형광램프에는 크게 열음극 형광램프(HCFL: hot cathode fluorescent lamp)와 냉음극 형광램프(CCFL: cold cathode fluorescent lamp)의 두 종류가 있다. 이들 형광램프의 휘도는 우수하지만 형광램프 내에 수은을 첨가하여 사용하고 있으며 점차로 수은 양에 대한 규제가 강화될 추세이다. 이에 대비하여 본 논문에서는 수은을 첨가하지 않는 냉음극 형광램프를 제작하여 전기적·광학적 특성을 측정하였다. 형광체는 PDP 형광체를 사용하였고, 가스는 제논(Xe)가스와 Xe+Ne, Xe+He 혼합가스를 주입하여서, 정현파 전압을 인가하여 측정하였다. 측정결과 네온(Ne) 가스에 소량의 Xe 가스를 첨가했을 때 관길이가 22cm, 램프전력이 3.1W, 휘도가 4500 cd/㎡로 효율이 약 13 lm/W 임을 알 수 있었다. Backlighting system in necessary to show various images in the LCD because LCD is a non-emissive display. The quality of LCD depends very much on the luminance of the backlighting system. The cold cathode fluorescent lamp (CCFL) is used as a major light source for backlighting system. Large amount of Hg is contained in every CCFL. It expected that there will the regulation for limiting the amount of Hg use in every CCFL in the near future. It will be necessary to develop Hg-free CCFL to meet the regulation. In this paper, He-free CCFLs were fabricated and characterized. The PDP phosphors, the mixture of Xe, He, and Ne were used to make and burn CCFLs. The CCFLs with luminance of 4,500 cd/㎡ and efficiency of 13 lm/W was obtained from this experiment.
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Comb 형 전극구조를 갖는 AC 플라즈마 디스플레이 패널의 전기, 광학적 특성
임성규,장호정,김동수,이순석 단국대학교 1999 論文集 Vol.34 No.-
The electrical and optical characteristics of comb type AC-PDP fabricated by the screen printing method were measured. The charge-voltage (Q-V), capacitance-voltage(C-V) and current-voltage (I-V) characteristics were also measured. The Q-V curve showed the firing voltage and transferred conduction charges and wall charges. The capacitance charge due to the charge of applied voltage was also observed from the C-V curve and it was shown that the air gap could not be considered 100% shorted during the discharge. It can be concluded that the increase of the discharge space by the comb type electrode structure reduces the firing voltage and the internal physical characteristics of the AC PDP cell can be understood by measuring various electrical characteristics.
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전계 발광 소자용 새로운 형광체 CaSiN_2 : Eu의 발광 특성 Eu Phosphors for Thin-Film Electroluminescent(TFEL) Devices
임성규,이순석 단국대학교 1998 論文集 Vol.32 No.-
The CaSiN_2 : Eu phosphor was tested as a possible material for thin - film electroluminescent (TFEL) device application. Ca_3N_2, Si_3N_4 and EuF_3 powders were mixed and fired for two hours under N_2 and H_2 environment at 1400℃ to synthesize CaSiN_2 : Eu phosphor. Photoluminescence characteristics of the synthesized phosphors were measured and compared with the electroluminescent characteristics of the CaSiN_2 : Eu TFEL devices. Electrical characteristics of the TFEL evices were also measured.
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Bipolar IC공정에서 collector, base 및 emitter 내의 비저항 및 이동도의 측정방법
林聖奎 단국대학교 1983 論文集 Vol.17 No.-
In this paper, a very simple method of measuring the resistivities and mobilities of collector, base and emitter using van der Pauw's method is introduced and the test pattern layout is also presented.
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李揆成,權相善,金大倫,朴哉林,林鍾吉,朴英淑 新羅大學校 1982 論文集 Vol.12 No.-
The present study aims to develop of evaluation method for college education. This study consiste of two parts: to identify the corelation between the freshmen's scores of pre-test for entrance examination and their scores of freshmen's year, and to make suggestions for the improvement of evaluation method in college on the basis of the former study results. Seen from the above mentioned aspects of this study, this study has meanings in its seek for a rational curriculum improvement and in its research of the pilot curriculum which presupposes the alleged system of limited graduation quota. This research which is conducted by above mentioned purpose andmeanings can be summerized as follows; 1) The freshmen's mean score of the-pre-test of college entrance examination is 192. 38. Among the departments of natural scienc attained the most higher score(204.22). and department of arts and gymnastics 162. 02 which is below average score. 2) In the achivements of the freshmn'e year the departments of natural sciences obtained the best results, followed by the departments of arts and gymnastics, education, and cultural aciences in oder. 3) There is no corelation between the pre-test scores of college entrance examination and the college achivement results. 4) The mean scores of the major and teaching subjects geneally increas as they go up into the advanced school years. 5) Each department has their own method of evaluation. 6) Teaching syllabus is asked to be presented whit the direction of clas, contents, purpose, and specific items of evaluation. 7) Achivements of college work must be evaluated by the normal distribution curve with the facts about specific factors of the study and students group taken into consideration.
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박상규,임남규,이용흔 중앙대학교 수학통계연구소 2000 수학통계논문집 Vol.- No.7
Statistiscal methods for assessing of bioequivalence in 2×2 crossover design are discussed and compared with KFDA criterion. Simulation study for this comparison is conducted and summarized. The simulation result suggests that KFDA should reconsider the current guidelines for bioequivalence. Keywords - Bioequivalence, Crossover design, Power approach
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金將起,林聖奎 단국대학교 1984 論文集 Vol.18 No.-
The flicker noise of the domestic metal film resistor with R=500Ω was measured by the noise measurement system composed of the low noise preamplifier and spectrum analyzer in a shield room. The noise index NI of the domestic metal film resistor was about -14㏈.
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MgZnSiN_2 : Eu TFEL 소자의 전기, 광학적 특성 Eu TFEL Devices
장지근,임성규,이순석 단국대학교 1998 論文集 Vol.32 No.-
The Mg_xZn_1-xSiN_2:Eu phosphor was studied as a possible material for thin-film electroluminescent (TFEL) device application. Mg, Zn, Si_3N_4, and EuF_3 powders were mixed and fired at 1400℃ to synthesize the Mg_xZn_1-xSiN_2:Eu phosphor. Photoluminescence characteristics of the synthesized phosphors were measured. Electrical characteristics of the Mg_xZn_1-xSiN_2:Eu TFEL devices were also measured.
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고체 도펀트 원을 이용한 실리콘 p-n 확산 접합의 형성
金將起,林聖奎,張志根,金哲晙 단국대학교 1995 論文集 Vol.29 No.-
Diffusion processes of boron and phosphorus into Si were studied with solid planar dopant sources produced by Owens-Illinois company in the semiconductor laboratory of Dankook University. In the experiment, BoronPlus GS-126 and PhosPlus TP-360/TP-470 were used as dopant sources in the boron diffusion and in the phosphorus diffusion, respectively. Experimental results for sheet resistance and doping profile showed a little variables such as the distance between wafer and source, the temperature profile of furnace, the flow rate of carrier gas, etc. A p-n diode having the emitter area of 40 × 40㎛^2 was designed and fabricated for the purpose of the application of experimental data. The fabricated device showed a good electrical characteristics of V_T(turn-on voltage) = 0.7(V), BV(breakdown voltage) = 5.8(V), I_0(reverse saturation current) = 1.93 × 10 exp(-9)(A), and η(ideanlity factor) = 1.8.
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