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Kim, Myung Chan,Sohn, Sang Ho,Park, Duck Kyu,Jung, Sang Kooun,Kim, Eun Lyoung,Lee, Yun Su,Hur, Youngjune,Park, Lee Soon,Choi, Kyu-Han TaylorFrancis 2007 Molecular Crystals and Liquid Crystals Vol.470 No.1
<P> In this study, we have tried the growth of indium tin oxide (ITO) thin films by using low-frequency magnetron sputtering method (LFMSM). Characteristics of ITO thin films deposited on polyethersulfone (PES) and polyetyleneterephthalate (PET) substrates are investigated. Experiments were carried out as a function of deposition time. With increasing the deposition time of the ITO thin films on PES substrate, the sheet resistance is decreased. ITO thin films on polymer substrates were amorphous structure.</P>
Room Temperature Deposition of Indium Zinc Oxide Films on PES Substrate by LF Magnetron Sputtering
Eun Lyoung Kim,Duck Kyu Park,Choong Soo Kim,Ho-Young Cho,Sang Kooun Jung,이성호 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
Using a indium zinc oxide (IZO) alloy target, highly transparent conducting oxide (TCO) thin films are prepared on polyether-sulphone (PES) substrates by low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, high surface uniformity and high optical transmittance. Experiments were carried out as a function of applied voltage and deposition time. At optimal deposition conditions, thin films of IZO with a sheet resistance of 29 ohm/sq. and an optical transmission of over 82 \% in the visible spectrum range were achieved and it is shown that the films could be used as a good electrode candidate. The IZO thin films fabricated by this method do not require substrate heating during the film preparation or any additional post-deposition annealing treatment. Energy band gap values were in the range of 3.47 eV and 3.58 eV. Surface roughness values were Ra(1nm) and Rp-v(5 nm). The IZO-coated PES substrate was used as an anode for the device. The basic structure used in this study are PES / IZO(150 nm) / $\alpha$-NPD(40 nm) / Alq$_3$(40 nm) / LiF(2 nm) / Al(140 nm). At 18 V, luminescence was 815.7 cd/m$^2$.
Study of the physical property of the cadmium sulfide thin film depending on the process condition
김맹준,Bong-Ki Min,이성호,김홍탁,Chang-Duk Kim,Sang Kooun Jung,손상호 한국물리학회 2010 Current Applied Physics Vol.10 No.3
CdS thin films of an n-type window layer of the CdTe thin film solar cell were grown by a chemical bath deposition method. The physical properties of the CdS thin films were investigated depending on the various substrates and the stirring speed. Surface morphological study was carried out by the scanning electron microscope and atomic force microscope. The structural property was investigated by using the Xray diffraction measurement and transmission electron microscopy. The structural characteristic of the CdS films depend on the substrate crystal structure. The stirring speed effect to the kinetics of the CdS film growth proved the heterogeneous growth mechanism proposed by Ortega-Borges and Lincot.