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Growth of ZnO nanodisk, nanospindles and nanoflowers for gas sensor: pH dependency
RAJENDRA CHARANDEO PAWAR,J.S. Shaikh,S. S. Suryavanshi,P.S. Patil 한국물리학회 2012 Current Applied Physics Vol.12 No.3
Suitable morphology for fast electron transportation is a crucial requirement for the fabrication of gas sensor application. Highly oriented and well defined zinc oxide (ZnO) nano/micro-scale structures are grown on the glass substrates using aqueous chemical route. The grown nanostructures have been characterized by X-ray diffraction pattern (XRD), scanning electron microscope (SEM) and optical absorption techniques. The SEM micrographs revealed the formation of disk, rod, spindle and flower-like morphologies at different pH values ranging from 5 to 10. The grown nanostructures were employed for acetone gas-sensing measurement. It is observed that the sensors based on nanoflowers showed higher response (95%) for acetone gas at 325 ℃. The high acetone gas sensitivity of ZnO nanoflowers can be attributed to the surface morphology. Moreover, nanoflower-like structure exhibits the fast response and recovery.
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양승규,김형섭,RAJENDRA CHARANDEO PAWAR,안성훈,이선영 한국정밀공학회 2015 International Journal of Precision Engineering and Vol.16 No.5
Barium Titanate (BaTiO3, BT) layers were deposited using Nano Particle Deposition System (NPDS). NPDS is a type of Aerosol Deposition Method (ADM), dry deposition approach that simplifies the process of depositing a BaTiO3 layer because it eliminates the need for solvents or binder. In this study, a BaTiO3 dielectric layer was deposited using NPDS, and its dielectric properties and microstructure were characterized. Polarization-electric field (P-E) hysteresis analysis was used to characterize the resulting metalinsulator- metal (MIM) capacitor structure, and the capacitance value and leakage current were measured. The BaTiO3 dielectric layer had a thickness of 5 μm and a high dielectric constant of 1300 without heat treatment, while maintaining high crystallinity after deposition. A high capacitance value of 228 nF/cm2 was obtained. This work demonstrated the use of ADM for fabricating a capacitor structure.
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