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Optical and Electrical Properties of Bulk-grown Ternary In_xGa_(1−x)As
Y. K. Yeo,A. C. Bergstrom,R. L. Hengehold,J. W. Wei,S. Guha,L. P. Gonzalez,G. Rajagopalan,류미이 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
Bulk ternary In_xGa_(1−x)As polycrystals were grown using the vertical Bridgman technique. The optical and electrical properties of these bulk In_xGa_(1−x)As were investigated as a function of indium mole fraction from 0.75 to 0.99 by using photoluminescence (PL) and Hall-effect measurements. All samples showed good infrared transmission. A free exciton (FX) transition peak was observed from all bulk In_xGa_(1−x)As samples, and it redshifted from 0.568 to 0.412 eV as the indium mole fraction increased from 0.75 to 0.99. Bandgaps estimated from the indium compositionand temperature-dependent FX peaks generally followed the theoretically calculated bandgaps. All as-grown In_xGa_(1−x)As samples showed n-type conductivity. Although all bulk In_xGa_(1−x)As samples showed good optical transmissions and PL transitions, as well as high carrier mobilitites, they exhibited some random compositional fluctuations across the sample area.
Mee-Yi Ryu,E. A. Moore,R. L. Hengehold,T. D. Steiner,Y. K. Yeo 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Electrical activation studies of Si-implanted AlxG1ကxN grown on sapphire substrate have been made as a function of ion dose, anneal temperature, and anneal time. The samples were annealed from 1200 to 1350 C with a 500 A thick AlN cap in a nitrogen environment. The optimum anneal temperature for Al0:25Ga0:75N samples implanted with a dose of 1 1015 cmက2 is around 1350 C, exhibiting nearly 87 % electrical activation eciency. Both the electrical activation eciency and Hall mobility of Si-implanted Al0:18Ga0:82N annealed at 1200 C from 5 to 25 min increase continuously with anneal time, but at a much slower rate as anneal time increases. The activation eciencies of 94 and 89 % were obtained for doses of 1 1015 and 5 1014 cmက2, respectively, after annealing at 1200 C for 25 min, which are the highest activation eciency reported for a given dose, to the best of our knowledge.
Electroluminescence of n-Zn1-xMgxO/ZnO/p-Zn1-xMgxO Heterostructures Grown on Si Substrates
Sh. U. Yuldashev,T. W. Kang,R. A. Nusretov,I. V. Khvan,P. K. Khabibullaev,Y. K. Yeo,R. L. Hengehold 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures were grown on single-crystal p-type Si (100) substrates by using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. P-type conductivity was observed for the nitrogen-doped ZnO and Zn0.9Mg0.1O films. A distinct visible electroluminescence was observed at room temperature from the n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures under forward bias conditions.
E. A. Moore,Y. K. Yeo,R. L. Hengehold,류미이 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.6
Both optical and electrical activation studies of Si-implanted Al0.45Ga0.55N for n-type conductivity have been made as a function of the ion dose and the anneal temperature by using cathodoluminescence (CL) and temperature-dependent Hall-effect measurements. Silicon ions were implanted at 200 keV with doses ranging from 1 × 1014 to 1 × 1015 cm−2 at room temperature. The samples were subsequently annealed from 1150 to 1350 ˚C for 20 min in a nitrogen environment. The CL intensity of the near band emission increased as the annealing temperature was increased, showing a successive implantation damage recovery. These CL results coincide well with the results of the annealing temperature-dependent electrical activation study. The carrier concentration (activation efficiency) and the Hall mobility also increase with increasing annealing temperature.